门控 WSe2 双层膜中浆果曲率的光学控制

IF 4.5 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Majeed Ur Rehman, Zia Ur Rahman, Azizur Rahman, Waqas Ahmad, Sadeeq Ullah
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引用次数: 0

摘要

与单层 2H 过渡金属二卤化物(TMDCs)不同,2H TMDCs 的双层膜保持反转和时间反转(TR)对称性,导致贝里曲率(Ω(k)∼0)消失,从而抑制了各种潜在的传输现象。非零贝里曲率(Ω(k)≠0)是发生包括反常霍尔效应和反常奈恩斯特效应在内的几种非常规输运现象的必要条件。为了克服这一限制,我们利用静电门控和圆偏振光作为外部手段,打破了双层 TMDC 的这些对称性。对于非门控 WSe2 双层膜,圆偏振光会打破 TR 对称性,在传导带和价带中产生有限的贝里曲率信号,该信号可通过光强及其极性进行控制。在门控 WSe2 双层膜中,反转对称性也被打破,我们观察到导带内的贝里曲率出现符号反转,其程度取决于电门控和光强度的相对强度。总体而言,在有限偏压和光强条件下,WSe2 的 2H 双层膜表现出有限的自旋霍尔、谷霍尔和反常霍尔电导率,这些电导率取决于外加扰动的强度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Optical control of berry curvature in gated WSe2 bilayers
Unlike single layers of 2H transition metal dichalcogenides (TMDCs), bilayers of 2H TMDCs maintain inversion and time reversal (TR) symmetries, resulting in a vanishing Berry curvature ( Ω(k)0) that inhibits various potential transport phenomena. A nonzero Berry curvature (Ω(k)0) is imperative for the occurrence of several unconventional transport phenomena, including the anomalous Hall effect and the anomalous Nernst effect. To overcome this limitation, we break these symmetries in bilayer TMDCs using electrostatic gating and circularly polarized light as external means. For non-gated WSe2 bilayers, circularly polarized light breaks TR symmetry, creating a finite Berry curvature signal in both conduction and valence bands, controllable by light intensity and its polarity. In gated WSe2 bilayers, where inversion symmetry is also broken, we observe a sign reversal in Berry curvature within the conduction bands, the extent of which depends on the relative strengths of the electric gating and light intensity. Overall, under finite bias and light intensity, the 2H bilayers of WSe2 exhibits finite spin Hall, valley Hall, and anomalous Hall conductivities, which depend on the strengths of the applied perturbations.
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来源期刊
2D Materials
2D Materials MATERIALS SCIENCE, MULTIDISCIPLINARY-
CiteScore
10.70
自引率
5.50%
发文量
138
审稿时长
1.5 months
期刊介绍: 2D Materials is a multidisciplinary, electronic-only journal devoted to publishing fundamental and applied research of the highest quality and impact covering all aspects of graphene and related two-dimensional materials.
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