通过 DFT 计算研究 Ru 基无机卤化物包光体 ARuBr3(A = K、Rb、Cs)的结构、电子、光学和弹性特性

IF 2.9 4区 综合性期刊 Q1 Multidisciplinary
Danish Abdullah, Dinesh C. Gupta
{"title":"通过 DFT 计算研究 Ru 基无机卤化物包光体 ARuBr3(A = K、Rb、Cs)的结构、电子、光学和弹性特性","authors":"Danish Abdullah, Dinesh C. Gupta","doi":"10.1007/s13369-024-09524-2","DOIUrl":null,"url":null,"abstract":"<p>We are prompted to examine KRuBr<sub>3</sub>, RbRuBr<sub>3,</sub> and CsRuBr<sub>3</sub> materials since they are novel and superior semiconductor materials for sustainable energy devices. In this investigation, we adopted approaches based on density functional theory to conduct an extensive computational study of these materials and clarify their diverse features. We implemented the Birch–Murnaghan fit to figure out the structural stability of these materials under scrutiny, and the modified potential of Becke–Johnson has been employed to establish their electronic properties. The KRuBr<sub>3</sub>, RbRuBr<sub>3,</sub> and CsRuBr<sub>3</sub> materials' band-structure data during the evaluation rendered it obvious that these materials exhibit an indirect semiconductor nature, with bandgap values of 1.81 eV, 1.79 eV, and 1.74 eV, respectively. The three critical elastic constants for each of these materials under inquiry were initially determined and these values were subsequently employed to assess every mechanical characteristic of the materials under study. To identify the degree of ductility, the computed Pugh's and Poisson's ratios for the KRuBr<sub>3</sub>, RbRuBr<sub>3,</sub> and CsRuBr<sub>3</sub> materials were confirmed. The bandgap values of the explored materials lie in the range of the visible spectrum reflecting its feasibility for solar cell technology. Also, the highest peaks of absorption coefficient and lowest value of energy loss and reflectivity suggest its importance in photovoltaic applications.</p>","PeriodicalId":8109,"journal":{"name":"Arabian Journal for Science and Engineering","volume":"81 1","pages":""},"PeriodicalIF":2.9000,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigation of Structural, Electronic, Optical, and Elastic Properties of Ru-Based Inorganic Halide Perovskites ARuBr3 (A = K, Rb, Cs) via DFT Computations\",\"authors\":\"Danish Abdullah, Dinesh C. Gupta\",\"doi\":\"10.1007/s13369-024-09524-2\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>We are prompted to examine KRuBr<sub>3</sub>, RbRuBr<sub>3,</sub> and CsRuBr<sub>3</sub> materials since they are novel and superior semiconductor materials for sustainable energy devices. In this investigation, we adopted approaches based on density functional theory to conduct an extensive computational study of these materials and clarify their diverse features. We implemented the Birch–Murnaghan fit to figure out the structural stability of these materials under scrutiny, and the modified potential of Becke–Johnson has been employed to establish their electronic properties. The KRuBr<sub>3</sub>, RbRuBr<sub>3,</sub> and CsRuBr<sub>3</sub> materials' band-structure data during the evaluation rendered it obvious that these materials exhibit an indirect semiconductor nature, with bandgap values of 1.81 eV, 1.79 eV, and 1.74 eV, respectively. The three critical elastic constants for each of these materials under inquiry were initially determined and these values were subsequently employed to assess every mechanical characteristic of the materials under study. To identify the degree of ductility, the computed Pugh's and Poisson's ratios for the KRuBr<sub>3</sub>, RbRuBr<sub>3,</sub> and CsRuBr<sub>3</sub> materials were confirmed. The bandgap values of the explored materials lie in the range of the visible spectrum reflecting its feasibility for solar cell technology. Also, the highest peaks of absorption coefficient and lowest value of energy loss and reflectivity suggest its importance in photovoltaic applications.</p>\",\"PeriodicalId\":8109,\"journal\":{\"name\":\"Arabian Journal for Science and Engineering\",\"volume\":\"81 1\",\"pages\":\"\"},\"PeriodicalIF\":2.9000,\"publicationDate\":\"2024-08-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Arabian Journal for Science and Engineering\",\"FirstCategoryId\":\"103\",\"ListUrlMain\":\"https://doi.org/10.1007/s13369-024-09524-2\",\"RegionNum\":4,\"RegionCategory\":\"综合性期刊\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"Multidisciplinary\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Arabian Journal for Science and Engineering","FirstCategoryId":"103","ListUrlMain":"https://doi.org/10.1007/s13369-024-09524-2","RegionNum":4,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"Multidisciplinary","Score":null,"Total":0}
引用次数: 0

摘要

由于 KRuBr3、RbRuBr3 和 CsRuBr3 材料是用于可持续能源设备的新型优质半导体材料,因此我们对它们进行了研究。在这项研究中,我们采用了基于密度泛函理论的方法,对这些材料进行了广泛的计算研究,并阐明了它们的不同特征。我们采用 Birch-Murnaghan 拟合方法来计算这些材料的结构稳定性,并利用贝克尔-约翰逊的修正势来确定它们的电子特性。在评估过程中,KRuBr3、RbRuBr3 和 CsRuBr3 材料的带状结构数据表明,这些材料具有间接半导体性质,带隙值分别为 1.81 eV、1.79 eV 和 1.74 eV。初步确定了每种被研究材料的三个临界弹性常数,随后利用这些数值评估了被研究材料的各种机械特性。为了确定延展性的程度,对 KRuBr3、RbRuBr3 和 CsRuBr3 材料计算得出的普氏和泊松比进行了确认。所研究材料的带隙值位于可见光谱范围内,反映了其在太阳能电池技术方面的可行性。此外,最高的吸收系数峰值以及最低的能量损失和反射率值也表明了其在光伏应用中的重要性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Investigation of Structural, Electronic, Optical, and Elastic Properties of Ru-Based Inorganic Halide Perovskites ARuBr3 (A = K, Rb, Cs) via DFT Computations

Investigation of Structural, Electronic, Optical, and Elastic Properties of Ru-Based Inorganic Halide Perovskites ARuBr3 (A = K, Rb, Cs) via DFT Computations

We are prompted to examine KRuBr3, RbRuBr3, and CsRuBr3 materials since they are novel and superior semiconductor materials for sustainable energy devices. In this investigation, we adopted approaches based on density functional theory to conduct an extensive computational study of these materials and clarify their diverse features. We implemented the Birch–Murnaghan fit to figure out the structural stability of these materials under scrutiny, and the modified potential of Becke–Johnson has been employed to establish their electronic properties. The KRuBr3, RbRuBr3, and CsRuBr3 materials' band-structure data during the evaluation rendered it obvious that these materials exhibit an indirect semiconductor nature, with bandgap values of 1.81 eV, 1.79 eV, and 1.74 eV, respectively. The three critical elastic constants for each of these materials under inquiry were initially determined and these values were subsequently employed to assess every mechanical characteristic of the materials under study. To identify the degree of ductility, the computed Pugh's and Poisson's ratios for the KRuBr3, RbRuBr3, and CsRuBr3 materials were confirmed. The bandgap values of the explored materials lie in the range of the visible spectrum reflecting its feasibility for solar cell technology. Also, the highest peaks of absorption coefficient and lowest value of energy loss and reflectivity suggest its importance in photovoltaic applications.

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来源期刊
Arabian Journal for Science and Engineering
Arabian Journal for Science and Engineering 综合性期刊-综合性期刊
CiteScore
5.20
自引率
3.40%
发文量
0
审稿时长
4.3 months
期刊介绍: King Fahd University of Petroleum & Minerals (KFUPM) partnered with Springer to publish the Arabian Journal for Science and Engineering (AJSE). AJSE, which has been published by KFUPM since 1975, is a recognized national, regional and international journal that provides a great opportunity for the dissemination of research advances from the Kingdom of Saudi Arabia, MENA and the world.
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