用于传感器内非易失性逻辑的宽带光活性光电 FeFET 存储器

IF 7.3 2区计算机科学 Q1 COMPUTER SCIENCE, INFORMATION SYSTEMS

Science China Information Sciences Pub Date : 2024-08-19 DOI:10.1007/s11432-024-4117-y

Yong Zhang, Dongxin Tan, Cizhe Fang, Zheng-Dong Luo, Qiyu Yang, Qiao Zhang, Yu Zhang, Xuetao Gan, Yan Liu, Yue Hao, Genquan Han

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引用次数: 0

摘要

我们开发了一种具有 P-Si 栅极的 MoS2 沟道 FeFET，可用作具有记忆功能的光传感器。在 20 nW 的辐照功率下，电流比达到 104。通过耐久性测试对该器件的可靠性进行了评估，结果表明其保持时间超过 1000 秒。此外，还通过应用光电混合逻辑 AND 门验证了传感器内的数字运算。这种新颖的光学传感原理有助于开发光电混合集成的新方法。

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Broadband light-active optoelectronic FeFET memory for in-sensor non-volatile logic

A MoS₂ channel FeFET with a P–Si gate was developed for use as a photosensor with a memory function. A current ratio of 10⁴ was achieved at an irradiation power of 20 nW. The reliability of the device was evaluated by means of endurance tests, and a retention time of more than 1000 s was observed. Furthermore, in-sensor digital computing was verified by applying an optoelectronic hybrid logic AND gate. This novel optical sensing principle enables the development of new approaches for optoelectronic hybrid integration.

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来源期刊

Science China Information Sciences COMPUTER SCIENCE, INFORMATION SYSTEMS-

CiteScore

12.60

自引率

5.70%

发文量

224

审稿时长

8.3 months

期刊介绍： Science China Information Sciences is a dedicated journal that showcases high-quality, original research across various domains of information sciences. It encompasses Computer Science & Technologies, Control Science & Engineering, Information & Communication Engineering, Microelectronics & Solid-State Electronics, and Quantum Information, providing a platform for the dissemination of significant contributions in these fields.