{"title":"用于传感器内非易失性逻辑的宽带光活性光电 FeFET 存储器","authors":"Yong Zhang, Dongxin Tan, Cizhe Fang, Zheng-Dong Luo, Qiyu Yang, Qiao Zhang, Yu Zhang, Xuetao Gan, Yan Liu, Yue Hao, Genquan Han","doi":"10.1007/s11432-024-4117-y","DOIUrl":null,"url":null,"abstract":"<p>A MoS<sub>2</sub> channel FeFET with a P–Si gate was developed for use as a photosensor with a memory function. A current ratio of 10<sup>4</sup> was achieved at an irradiation power of 20 nW. The reliability of the device was evaluated by means of endurance tests, and a retention time of more than 1000 s was observed. Furthermore, in-sensor digital computing was verified by applying an optoelectronic hybrid logic AND gate. This novel optical sensing principle enables the development of new approaches for optoelectronic hybrid integration.</p>","PeriodicalId":21618,"journal":{"name":"Science China Information Sciences","volume":null,"pages":null},"PeriodicalIF":7.3000,"publicationDate":"2024-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Broadband light-active optoelectronic FeFET memory for in-sensor non-volatile logic\",\"authors\":\"Yong Zhang, Dongxin Tan, Cizhe Fang, Zheng-Dong Luo, Qiyu Yang, Qiao Zhang, Yu Zhang, Xuetao Gan, Yan Liu, Yue Hao, Genquan Han\",\"doi\":\"10.1007/s11432-024-4117-y\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>A MoS<sub>2</sub> channel FeFET with a P–Si gate was developed for use as a photosensor with a memory function. A current ratio of 10<sup>4</sup> was achieved at an irradiation power of 20 nW. The reliability of the device was evaluated by means of endurance tests, and a retention time of more than 1000 s was observed. Furthermore, in-sensor digital computing was verified by applying an optoelectronic hybrid logic AND gate. This novel optical sensing principle enables the development of new approaches for optoelectronic hybrid integration.</p>\",\"PeriodicalId\":21618,\"journal\":{\"name\":\"Science China Information Sciences\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":7.3000,\"publicationDate\":\"2024-08-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Science China Information Sciences\",\"FirstCategoryId\":\"94\",\"ListUrlMain\":\"https://doi.org/10.1007/s11432-024-4117-y\",\"RegionNum\":2,\"RegionCategory\":\"计算机科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"COMPUTER SCIENCE, INFORMATION SYSTEMS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Science China Information Sciences","FirstCategoryId":"94","ListUrlMain":"https://doi.org/10.1007/s11432-024-4117-y","RegionNum":2,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"COMPUTER SCIENCE, INFORMATION SYSTEMS","Score":null,"Total":0}
Broadband light-active optoelectronic FeFET memory for in-sensor non-volatile logic
A MoS2 channel FeFET with a P–Si gate was developed for use as a photosensor with a memory function. A current ratio of 104 was achieved at an irradiation power of 20 nW. The reliability of the device was evaluated by means of endurance tests, and a retention time of more than 1000 s was observed. Furthermore, in-sensor digital computing was verified by applying an optoelectronic hybrid logic AND gate. This novel optical sensing principle enables the development of new approaches for optoelectronic hybrid integration.
期刊介绍:
Science China Information Sciences is a dedicated journal that showcases high-quality, original research across various domains of information sciences. It encompasses Computer Science & Technologies, Control Science & Engineering, Information & Communication Engineering, Microelectronics & Solid-State Electronics, and Quantum Information, providing a platform for the dissemination of significant contributions in these fields.