Peter P. Murmu, Martin Markwitz, Shen V. Chong, Niall Malone, Takao Mori, Himanshu Vyas, L. John Kennedy, Sergey Rubanov, Clastinrusselraj Indirathankam Sathish, Jiabao Yi, John V. Kennedy
{"title":"掺硒透明碘化铜薄膜中缺陷和掺杂复合物介导的高功率因数","authors":"Peter P. Murmu, Martin Markwitz, Shen V. Chong, Niall Malone, Takao Mori, Himanshu Vyas, L. John Kennedy, Sergey Rubanov, Clastinrusselraj Indirathankam Sathish, Jiabao Yi, John V. Kennedy","doi":"10.1016/j.mtener.2024.101639","DOIUrl":null,"url":null,"abstract":"Copper iodide (CuI) is a promising -type transparent thermoelectric material for near-room temperature energy harvesting. We report a high-power factor for selenium (Se)-doped CuI films. Ion beam-sputtered CuI films were doped using 30 keV Se implantation with Se concentration varying between 0.50% and 6.50%. Hall effect measurements showed a ∼34% increase in electrical conductivity (σ ≈ 36.1 Ωcm) due to a ∼54% increase in carrier density (p ≈ 5.4 × 10 cm) in the -type γ-CuI film implanted with 5.0 × 10 Se.cm. A high Seebeck coefficient, α ≈ 388.9 μVK, and moderate electrical conductivity, σ ≈ 29.1 Ωcm, yield a nearly 85% increase in the power factor, ασ ≈ 439.7 μWmK, for a 1.0 × 10 Se.cm implanted film compared to the unimplanted film (ασ ≈ 236.4 μWmK). Monte Carlo simulation and density functional theory calculations revealed that the increased displacement per atom values and the {Se−} defect complex-induced shallow acceptor could be attributed to the observed increase in hole density. Our results highlight that native defects and defect complexes are beneficial for enhancing the power factor in transparent CuI for thermoelectric applications.","PeriodicalId":18277,"journal":{"name":"Materials Today Energy","volume":"7 1","pages":""},"PeriodicalIF":9.0000,"publicationDate":"2024-06-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Defect and dopant complex mediated high power factor in transparent selenium-doped copper iodide thin films\",\"authors\":\"Peter P. Murmu, Martin Markwitz, Shen V. Chong, Niall Malone, Takao Mori, Himanshu Vyas, L. John Kennedy, Sergey Rubanov, Clastinrusselraj Indirathankam Sathish, Jiabao Yi, John V. Kennedy\",\"doi\":\"10.1016/j.mtener.2024.101639\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Copper iodide (CuI) is a promising -type transparent thermoelectric material for near-room temperature energy harvesting. We report a high-power factor for selenium (Se)-doped CuI films. Ion beam-sputtered CuI films were doped using 30 keV Se implantation with Se concentration varying between 0.50% and 6.50%. Hall effect measurements showed a ∼34% increase in electrical conductivity (σ ≈ 36.1 Ωcm) due to a ∼54% increase in carrier density (p ≈ 5.4 × 10 cm) in the -type γ-CuI film implanted with 5.0 × 10 Se.cm. A high Seebeck coefficient, α ≈ 388.9 μVK, and moderate electrical conductivity, σ ≈ 29.1 Ωcm, yield a nearly 85% increase in the power factor, ασ ≈ 439.7 μWmK, for a 1.0 × 10 Se.cm implanted film compared to the unimplanted film (ασ ≈ 236.4 μWmK). Monte Carlo simulation and density functional theory calculations revealed that the increased displacement per atom values and the {Se−} defect complex-induced shallow acceptor could be attributed to the observed increase in hole density. Our results highlight that native defects and defect complexes are beneficial for enhancing the power factor in transparent CuI for thermoelectric applications.\",\"PeriodicalId\":18277,\"journal\":{\"name\":\"Materials Today Energy\",\"volume\":\"7 1\",\"pages\":\"\"},\"PeriodicalIF\":9.0000,\"publicationDate\":\"2024-06-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Today Energy\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1016/j.mtener.2024.101639\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Today Energy","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1016/j.mtener.2024.101639","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
Defect and dopant complex mediated high power factor in transparent selenium-doped copper iodide thin films
Copper iodide (CuI) is a promising -type transparent thermoelectric material for near-room temperature energy harvesting. We report a high-power factor for selenium (Se)-doped CuI films. Ion beam-sputtered CuI films were doped using 30 keV Se implantation with Se concentration varying between 0.50% and 6.50%. Hall effect measurements showed a ∼34% increase in electrical conductivity (σ ≈ 36.1 Ωcm) due to a ∼54% increase in carrier density (p ≈ 5.4 × 10 cm) in the -type γ-CuI film implanted with 5.0 × 10 Se.cm. A high Seebeck coefficient, α ≈ 388.9 μVK, and moderate electrical conductivity, σ ≈ 29.1 Ωcm, yield a nearly 85% increase in the power factor, ασ ≈ 439.7 μWmK, for a 1.0 × 10 Se.cm implanted film compared to the unimplanted film (ασ ≈ 236.4 μWmK). Monte Carlo simulation and density functional theory calculations revealed that the increased displacement per atom values and the {Se−} defect complex-induced shallow acceptor could be attributed to the observed increase in hole density. Our results highlight that native defects and defect complexes are beneficial for enhancing the power factor in transparent CuI for thermoelectric applications.
期刊介绍:
Materials Today Energy is a multi-disciplinary, rapid-publication journal focused on all aspects of materials for energy.
Materials Today Energy provides a forum for the discussion of high quality research that is helping define the inclusive, growing field of energy materials.
Part of the Materials Today family, Materials Today Energy offers authors rigorous peer review, rapid decisions, and high visibility. The editors welcome comprehensive articles, short communications and reviews on both theoretical and experimental work in relation to energy harvesting, conversion, storage and distribution, on topics including but not limited to:
-Solar energy conversion
-Hydrogen generation
-Photocatalysis
-Thermoelectric materials and devices
-Materials for nuclear energy applications
-Materials for Energy Storage
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