{"title":"高温下极慢的 O 扩散对氢化物离子导体 LaH2.75O0.125 中极快的 H 扩散的影响","authors":"Yoyo Hinuma","doi":"arxiv-2409.05353","DOIUrl":null,"url":null,"abstract":"Neural network potential based molecular dynamics (MD) simulations on the\nexcellent H conductor LaH2.75O0.125 show that O starts diffusing above a\ncritical temperature of Tc~550 K, according to the variance of atom positions\nregardless of the time step. The original diffusion process at temperatures\nbelow Tc has an activation barrier of 0.25 eV. Use of MD simulations with\nvarious O and La mass revealed, at above Tc, the coexistence of the 0.25 eV\nprocess and an additional diffusion process with an activation barrier of 0.20\neV. The O and La have strongly anharmonic characters.","PeriodicalId":501234,"journal":{"name":"arXiv - PHYS - Materials Science","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of very slow O diffusion at high temperature on very fast H diffusion in the hydride ion conductor LaH2.75O0.125\",\"authors\":\"Yoyo Hinuma\",\"doi\":\"arxiv-2409.05353\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Neural network potential based molecular dynamics (MD) simulations on the\\nexcellent H conductor LaH2.75O0.125 show that O starts diffusing above a\\ncritical temperature of Tc~550 K, according to the variance of atom positions\\nregardless of the time step. The original diffusion process at temperatures\\nbelow Tc has an activation barrier of 0.25 eV. Use of MD simulations with\\nvarious O and La mass revealed, at above Tc, the coexistence of the 0.25 eV\\nprocess and an additional diffusion process with an activation barrier of 0.20\\neV. The O and La have strongly anharmonic characters.\",\"PeriodicalId\":501234,\"journal\":{\"name\":\"arXiv - PHYS - Materials Science\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-09-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"arXiv - PHYS - Materials Science\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/arxiv-2409.05353\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"arXiv - PHYS - Materials Science","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/arxiv-2409.05353","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
基于神经网络势的分子动力学(MD)模拟显示,无论时间步长如何,O 在临界温度 Tc~550 K 以上开始扩散。温度低于 Tc 时的原始扩散过程的激活势垒为 0.25 eV。利用不同 O 和 La 质量的 MD 模拟发现,在温度高于 Tc 时,0.25 eV 过程与活化势垒为 0.20eV 的附加扩散过程共存。O 和 La 具有强烈的非谐波特性。
Effect of very slow O diffusion at high temperature on very fast H diffusion in the hydride ion conductor LaH2.75O0.125
Neural network potential based molecular dynamics (MD) simulations on the
excellent H conductor LaH2.75O0.125 show that O starts diffusing above a
critical temperature of Tc~550 K, according to the variance of atom positions
regardless of the time step. The original diffusion process at temperatures
below Tc has an activation barrier of 0.25 eV. Use of MD simulations with
various O and La mass revealed, at above Tc, the coexistence of the 0.25 eV
process and an additional diffusion process with an activation barrier of 0.20
eV. The O and La have strongly anharmonic characters.