V. S. Ivchenko, D. V. Kazantsev, V. A. Ievleva, E. A. Kazantseva, A. Yu. Kuntsevich
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引用次数: 0
摘要
众所周知,在红外线照射下,声子极化子会在固体表面以接近光学声子共振的频率出现。在极化子活性表面顶端图案化的金属,由于等离子屏蔽作用,会局部阻挡表面波的激发,因此可用于波形设计。我们在 CO$_2$ 激光($\lambda\sim$10 $\mu$m)的照射下激发 SiC 表面的极化子波,并使用无孔近场干涉扫描探针显微镜观察它们。从金膜周期性条带结构附近的近场扫描中,我们确定了晶格外的布拉格散射(衍射),在满足波长匹配条件的前提下,来自不同条带的贡献相干相加。观察到的现象与波场计算结果一致。我们的观察结果证明,金属图案碳化硅具有制造片上极性红外电路的潜力。
Phonon-polariton Bragg generation at the surface of silicon carbide
Phonon polaritons are known to emerge at the surfaces of solids under IR
irradiation at frequencies close to the optical phonon resonance. Metal,
patterned on the top of the polariton-active surface, locally blocks the
excitation of the surface waves due to plasmonic screening and can be used for
the design of wave patterns. We excite the polaritonic waves at the surface of
SiC under the irradiation of a CO$_2$ laser ($\lambda\sim10$ $\mu$m) and
visualize them using apertureless near-field interference scanning probe
microscopy. From the near-field scans in the vicinity of the gold film
periodical strip structures, we identify the Bragg scattering (diffraction)
outside the lattice with the contribution from separate strips coherently
summed up, provided that the wavelength matching condition is fulfilled. The
observed phenomena agree with the wavefield calculations. Our observations
demonstrate the potential of metal-patterned silicon carbide for the
fabrication of on-chip polaritonic IR circuits.