热电半导体模型中溶液炸裂的数值诊断

Pub Date : 2024-09-01 DOI:10.1134/s0965542524700647
M. O. Korpusov, R. S. Shafir, A. K. Matveeva
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引用次数: 0

摘要

摘要 提出了一个电场势能和温度非线性方程组,用于描述电路板上半导体元件的加热情况,随着时间的推移可能会出现热和电气故障。研究还考虑了一种解炸裂的数值诊断方法。在对问题进行数值分析时,将原始偏微分方程系统简化为微分代数系统,并使用具有复系数的单级 Rosenbrock 方案进行求解。通过在连续细化的网格上计算近似解获得渐近尖锐的后验误差估计,从而检测精确解的膨胀。在各种初始条件下,对炸毁时间进行了数值估算。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Numerical Diagnostics of Solution Blow-Up in a Thermoelectric Semiconductor Model

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Numerical Diagnostics of Solution Blow-Up in a Thermoelectric Semiconductor Model

Abstract

A system of equations with nonlinearity in the electric field potential and temperature is proposed for describing the heating of semiconductor elements on an electrical board with thermal and electrical breakdowns possibly arising over time. A method for numerical diagnostics of solution blow-up is considered. In the numerical analysis of the problem, the original system of partial differential equations is reduced to a differential-algebraic system, which is solved using a single-stage Rosenbrock scheme with complex coefficients. The blow-up of the exact solution is detected using an asymptotically sharp a posteriori error estimate obtained by computing approximate solutions on sequentially refined grids. The blow-up time is numerically estimated in the case of various initial conditions.

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