Vladislav Nagorkin, Sebastian Schimmel, Paul Gebauer, Anna Isaeva, Danny Baumann, Andreas Koitzsch, Bernd Büchner, Christian Hess
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引用次数: 0
摘要
我们在低温下通过扫描隧道显微镜和光谱学研究了拓扑绝缘体Bi$_{2}$Te$_{3}$的电子特性。我们获得了拓扑表面狄拉克电子在不同能量下的高分辨率准粒子干涉数据。为了解释观测到的类粒子干涉数据,我们对表面和体态电子进行了自旋选择性联合态密度计算。我们的晶体不存在反向散射,而且主要散射矢量具有线性能量弥散,这证明了晶体的拓扑特性。此外,我们还探测到了非色散散射模式,并将其与体表散射联系起来,从而可以根据我们的准粒子干涉数据大致确定体表能隙范围。我们还测量了磁场高达 15 T 时的差分电导图,但没有观察到强烈的变化。
Bulk and surface electron scattering in disordered Bi$_{2}$Te$_{3}$ probed by quasiparticle interference
We investigated the electronic properties of the topological insulator
Bi$_{2}$Te$_{3}$ by scanning tunneling microscopy and spectroscopy at low
temperature. We obtained high-resolution quasiparticle interference data of the
topological surface Dirac electrons at different energies. Spin-selective joint
density of states calculations were performed for surface and bulk electronic
states to interpret the observed quasiparticle interference data. The
topological properties of our crystals are demonstrated by the absence of
backscattering along with the linear energy dispersion of the dominant
scattering vector. In addition, we detect non-dispersive scattering modes which
we associate with bulk-surface scattering and, thus, allow an approximate
identification of the bulk energy gap range based on our quasiparticle
interference data. Measurements of differential conductance maps in magnetic
fields up to 15 T have been carried out, but no strong modifications could be
observed.