从 $f$ 电子共线反铁磁结构推导出的大反常霍尔电导率

Hisashi Kotegawa, Hiroto Tanaka, Yuta Takeuchi, Hideki Tou, Hitoshi Sugawara, Junichi Hayashi, Keiki Takeda
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引用次数: 0

摘要

即使在反铁磁性(AFM)材料中,适当的对称性破缺也会产生反常霍尔(AH)效应。具有 $d$ 电子的巡回磁体是显示出显著响应的典型例子。相比之下,f$ 电子 AFM 结构产生响应的过程仍不清楚。在这项研究中,我们发现一种 AFM 材料 Ce$_2$CuGe$_6$ 产生了高达 550 $\Omega^{-1}$cm$^{-1}$ 的 AH 电导率 (AHC),超过了之前报道的 d$电子 AFM 材料的数值。观察到的特征(包括与电导率的比例关系)表明,这种 AH 传输是由来自 AFM 结构的内在和外在机制协同诱导的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Large Anomalous Hall Conductivity Derived from an $f$-Electron Collinear Antiferromagnetic Structure
Appropriate symmetry breaking generates an anomalous Hall (AH) effect, even in antiferromagnetic (AFM) materials. Itinerant magnets with $d$ electrons are typical examples that show a significant response. By contrast, the process by which a response emerges from $f$-electron AFM structures remains unclear. In this study, we show that an AFM material, Ce$_2$CuGe$_6$, yields a large AH conductivity (AHC) of $550$ $\Omega^{-1}$cm$^{-1}$, which exceeds the values previously reported in $d$-electron AFM materials. Observed features, including the scaling relation against electrical conductivity, suggest that this AH transport is induced cooperatively by both intrinsic and extrinsic mechanisms derived from the AFM structure.
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