分数切尔绝缘体中杂质诱导的热交叉

Ke Huang, Sankar Das Sarma, Xiao Li
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引用次数: 0

摘要

最近在斜方多层石墨烯中观察到的分数量子反常霍尔(FQAH)态引起了人们的极大关注。其中最引人入胜的观察结果是,随着温度的降低,不同分数填充的 FQAH 状态会让位于 IQAH 状态。在这项工作中,我们在一个玩具模型中提出了在有限温度范围内出现 FQAH 状态的机制。该模型由平切恩带和杂质组成,我们分析了杂质在有限温度下对系统行为的影响。我们认为,交叉可能源于热激发的能量惩罚与熵增加之间的竞争。我们用精确对角化的数值计算来支持我们的理论论证。我们的研究结果表明,杂质可能在五面体五层石墨烯从 FQAH 到 IQAH 状态的交叉过程中起着至关重要的作用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Impurity-induced thermal crossover in fractional Chern insulators
The recent experimental observation of fractional quantum anomalous Hall (FQAH) states in rhombohedral multilayer graphene has attracted significant attention. One of the most intriguing observations is that the FQAH states at various fractional fillings give way to IQAH states as the temperature is lowered. In this work, we propose a mechanism for the appearance of FQAH states within a finite temperature range in a toy model. The model consists of a flat Chern band and impurities, and we analyze the effects of impurities on the system's behavior at finite temperatures. We believe that the crossover may arise from the competition between the energy penalty for thermal excitations and the increase in entropy. We support our theoretical argument with numerical calculations using exact diagonalization. Our results suggest that impurities may play a crucial role in the crossover from the FQAH to IQAH states in rhombohedral pentalayer graphene.
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