双层卡戈梅晶格上环流电荷密度波的层间相关性

Jin-Wei Dong, Yu-Han Lin, Ruiqing Fu, Gang Su, Ziqiang Wang, Sen Zhou
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引用次数: 0

摘要

环流秩序被认为是在范霍夫填充$n_text{vH}=5/12$附近的钒基卡戈姆(e)金属($A$ = K、Rb、Cs)中发现的自发时间反转对称破缺2a_0 (times 2a_0$)电荷密度波(CDW)的有希望的候选者。弱耦合分析和均场计算证明,最近邻库仑斥力$V_1$和次最近邻库仑斥力$V_2$分别驱动实键和虚键有序的CDW,后者对应于时间反演对称破环电流CDW。了解这些键序 CDW 的层间相关性及其在块体 kagom\'e 材料中的后果非常重要。为了提供物理见解,我们在本文中研究了它们的c$轴堆叠,特别是环流CDW在最小双层kagom\'e晶格上的堆叠。我们计算了层间耦合为 $t_\perp=0.2t$的双层 kagom\'e 晶格上自由电子的实键和虚键阶堆叠的裸感度,它将范霍夫填充拆分为 $n_{+\text{vH}}=4.虽然实键有序 CDW 和虚键有序 CDW 仍然分别受到 $V_1$ 和 $V_2$ 的青睐,但它们的层间耦合对带填充 $n$ 非常敏感。它们倾向于在 $n_{\pm\text{vH}}$ 附近对称堆叠,两层中的键序完全相同,从而产生 2a_0 \times 2a_0 \times 1c_0$ CDW。另一方面,它们倾向于在 $n_\text{vH}$ 附近反对称堆叠,两层中的键序相反,从而产生 2a_0 \times 2a_0 \times 2c_0$ CDW。然后研究了具体的双层 $t$-$t_\perp$-$V_1$-V$_2$ 模型。我们得到了平均场基态,并确定了层间耦合作为各种相互作用下带填充的函数。研究了环流 CDW 的非三拓扑性质 ...
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Inter-Layer Correlation of Loop Current Charge Density Wave on the Bilayer Kagomé Lattice
Loop current order has been suggested as a promising candidate for the spontaneous time-reversal symmetry breaking $2a_0 \times 2a_0$ charge density wave (CDW) revealed in vanadium-based kagom\'e metals \avs\ ($A$ = K, Rb, Cs) near van Hove filling $n_\text{vH} = 5/12$. Weak-coupling analyses and mean field calculations have demonstrated that nearest-neighbor Coulomb repulsion $V_1$ and next-nearest-neighbor Coulomb repulsion $V_2$ drives, respectively, real and imaginary bond-ordered CDW, with the latter corresponding to time-reversal symmetry breaking loop current CDW. It is important to understand the inter-layer correlation of these bond-ordered CDWs and its consequences in the bulk kagom\'e materials. To provide physical insights, we investigate in this paper the $c$-axis stacking of them, loop current CDW in particular, on the minimal bilayer kagom\'e lattice. The bare susceptibilities for stacking of real and imaginary bond orders are calculated for the free electrons on the bilayer kagom\'e lattice with inter-layer coupling $t_\perp=0.2t$, which splits the van Hove filling to $n_{+\text{vH}}=4.64/12$ and $n_{-\text{vH}}=5.44/12$. While real and imaginary bond-ordered CDWs are still favored, respectively, by $V_1$ and $V_2$, their inter-layer coupling is sensitive to band filling $n$. They tend to stack symmetrically near $n_{\pm\text{vH}}$ with identical bond orders in the two layers and give rise to a $2a_0 \times 2a_0 \times 1c_0$ CDW. On the other hand, they prefer to stack antisymmetrically around $n_\text{vH}$ with opposite bond orders in the two layers and lead to a $2a_0 \times 2a_0 \times 2c_0$ CDW. The concrete bilayer $t$-$t_\perp$-$V_1$-V$_2$ model is then studied. We obtain the mean-field ground states and determine the inter-layer coupling as a function of band filling at various interactions. The nontrivial topological properties of loop current CDWs are studied ...
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