用等离子体化学方法对碳化硅进行改性以获得表面形态可控的颗粒

IF 0.8 4区物理与天体物理 Q4 PHYSICS, APPLIED

Technical Physics Letters Pub Date : 2024-08-29 DOI:10.1134/s1063785023180189

T. A. Shalygina, M. S. Rudenko, I. V. Nemtsev, V. A. Parfenov, S. Yu. Voronina

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引用次数: 0

摘要

摘要介绍了一种用于碳化硅颗粒改性的等离子体化学方法，该方法可以获得表面形态可控的颗粒。颗粒加工的可变参数是等离子体形成气体（Ar）和附加气体（H）的比例。结果表明，在 Ar/H = 100/0 时，观察到碳壳的形成；在 Ar/H 比率为 91/9 和 84/16 时，颗粒的特征是碳壳上分别装饰有硅纳米颗粒或纳米线。利用扫描电子显微镜和拉曼光谱对改性颗粒进行了分析。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Plasma-Chemical Method of Silicon Carbide Modification to Obtain Particles with Controlled Surface Morphology

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Plasma-Chemical Method of Silicon Carbide Modification to Obtain Particles with Controlled Surface Morphology

Abstract

A plasma-chemical method for the modification of silicon carbide particles is presented, which makes it possible to obtain particles with a controlled surface morphology. The variable parameter of particle processing was the ratio of the fraction of plasma-forming (Ar) and additional (H) gases. It was shown that at Ar/H = 100/0, the formation of a carbon shell is observed; at Ar/H ratios of 91/9 and 84/16, the particles are characterized by a carbon shell decorated with silicon nanoparticles or nanowires, respectively. The modified particles were analyzed using scanning electron microscopy and Raman spectroscopy.

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来源期刊

Technical Physics Letters 物理-物理：应用

CiteScore

1.50

自引率

0.00%

发文量

审稿时长

2-4 weeks

期刊介绍： Technical Physics Letters is a companion journal to Technical Physics and offers rapid publication of developments in theoretical and experimental physics with potential technological applications. Recent emphasis has included many papers on gas lasers and on lasing in semiconductors, as well as many reports on high Tc superconductivity. The excellent coverage of plasma physics seen in the parent journal, Technical Physics, is also present here with quick communication of developments in theoretical and experimental work in all fields with probable technical applications. Topics covered are basic and applied physics; plasma physics; solid state physics; physical electronics; accelerators; microwave electron devices; holography.