通过红外反射光谱的频率分析确定多层 4H-SiC 结构的厚度和掺杂特征

IF 0.8 4区物理与天体物理 Q4 PHYSICS, APPLIED

Technical Physics Letters Pub Date : 2024-08-29 DOI:10.1134/s1063785023180013

A. V. Afanasjev, V. I. Zubkov, V. A. Ilyin, V. V. Luchinin, M. V. Pavlova, M. F. Panov, V. V. Trushliakova, D. D. Firsov

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引用次数: 0

摘要

摘要开发了一种对红外反射光谱进行频率分析的技术，以确定碳化硅外延结构中各层的厚度和顺序。对 4H-SiC 外延结构进行了计算。结果表明，该方法对在层生长过程中掺杂水平连续增加所产生的光学边界高度敏感。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Determination of Thickness and Doping Features of Multilayer 4H-SiC Structures by Frequency Analysis of IR Reflection Spectra

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Determination of Thickness and Doping Features of Multilayer 4H-SiC Structures by Frequency Analysis of IR Reflection Spectra

Abstract

A technique has been developed for frequency analysis of the IR reflection spectrum to determine the thickness and order of the layers in the epitaxial structure of silicon carbide. Calculations for the 4H-SiC epitaxial structure have been performed. The method has been shown to be highly sensitive to optical boundaries resulting from a sequential increase in the doping level during the layer growth.

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来源期刊

Technical Physics Letters 物理-物理：应用

CiteScore

1.50

自引率

0.00%

发文量

审稿时长

2-4 weeks

期刊介绍： Technical Physics Letters is a companion journal to Technical Physics and offers rapid publication of developments in theoretical and experimental physics with potential technological applications. Recent emphasis has included many papers on gas lasers and on lasing in semiconductors, as well as many reports on high Tc superconductivity. The excellent coverage of plasma physics seen in the parent journal, Technical Physics, is also present here with quick communication of developments in theoretical and experimental work in all fields with probable technical applications. Topics covered are basic and applied physics; plasma physics; solid state physics; physical electronics; accelerators; microwave electron devices; holography.