具有可靠高灵敏度的压阻 PtSe$_2$ 压力传感器及其与 CMOS ASIC 基底面的集成

Sebastian Lukas, Nico Rademacher, Sofía Cruces, Michael Gross, Eva Desgué, Stefan Heiserer, Nikolas Dominik, Maximilian Prechtl, Oliver Hartwig, Cormac Ó Coileáin, Tanja Stimpel Lindner, Pierre Legagneux, Arto Rantala, Juha Matti Saari, Miika Soikkeli, Georg S. Duesberg, Max C. Lemme
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引用次数: 0

摘要

基于膜的传感器是微机电系统(MEMS)的一个重要市场。二维(2D)材料质量小,是悬浮膜的最佳候选材料,可提供高灵敏度、小尺寸的传感器。本研究展示了采用大规模合成的二维二硒化铂(PtSe${_2}$)薄膜作为仅由薄聚合物层支撑的频阻膜的压力传感器。我们研究了具有不同生长参数的三种不同合成方法,并建立了一种可靠的高产率制造工艺,用于制造密封空腔中的悬浮式 PtSe${_2}$/PMMA 膜。压力传感器的灵敏度超过 6 x 10${^4}$ kPa。我们的研究表明,灵敏度明显取决于膜的直径和 PtSe${_2}$ 薄膜的压阻测量因子。通过减少器件内膜的数量来减小器件的总尺寸,可显著提高面积归一化灵敏度。这样就能制造出具有高灵敏度的压力传感器,但器件占地面积却比目前最先进的 MEMS 技术小得多。我们进一步将 PtSe${_2}$ 压力传感器与 CMOS 技术相结合,提高了基于 PtSe${_2}$ 的 MEMS 和 NEMS 器件的技术成熟度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Piezoresistive PtSe$_2$ pressure sensors with reliable high sensitivity and their integration into CMOS ASIC substrates
Membrane-based sensors are an important market for microelectromechanical systems (MEMS). Two-dimensional (2D) materials, with their low mass, are excellent candidates for suspended membranes to provide high sensitivity, small footprint sensors. The present work demonstrates pressure sensors employing large-scale-synthesized 2D platinum diselenide (PtSe${_2}$) films as piezoresistive membranes supported only by a thin polymer layer. We investigate three different synthesis methods with contrasting growth parameters and establish a reliable high yield fabrication process for suspended PtSe${_2}$/PMMA membranes across sealed cavities. The pressure sensors reproducibly display sensitivities above 6 x 10${^4}$ kPa. We show that the sensitivity clearly depends on the membrane diameter and the piezoresistive gauge factor of the PtSe${_2}$ film. Reducing the total device size by decreasing the number of membranes within a device leads to a significant increase in the area-normalized sensitivity. This allows the manufacturing of pressure sensors with high sensitivity but a much smaller device footprint than the current state-of-the-art MEMS technology. We further integrate PtSe${_2}$ pressure sensors with CMOS technology, improving the technological readiness of PtSe${_2}$-based MEMS and NEMS devices.
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