316 不锈钢挡板成形器螺栓在使用过程中形成的局部变形部位偏析行为的复杂性

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Scripta Materialia Pub Date : 2024-09-09 DOI:10.1016/j.scriptamat.2024.116371

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引用次数: 0

摘要

对在加压水反应堆中使用了 40 年的 316 不锈钢挡板成形器螺栓进行了辐照后评估。显微结构分析表明存在无缺陷位错通道和应变诱导孪晶，表明在服役期间至少有一次以接近屈服应力的应力水平加载。在通道和孪晶形成过程中，原生辐照诱导的镍/硅沉淀可能被破坏，在持续辐照过程中，在新形成的位错通道内和沿∑3边界形成了次生的、明显更粗的镍/硅沉淀。应变诱导特征内部的复杂化学反应可能与差排堆积重叠，并影响局部腐蚀和材料的长期性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Complexity of segregation behavior at localized deformation sites formed while in service in a 316 stainless steel baffle-former bolt

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Complexity of segregation behavior at localized deformation sites formed while in service in a 316 stainless steel baffle-former bolt

Post-irradiation evaluation was performed on a 316 stainless steel baffle former bolt harvested after 40 years of service in a pressurized water reactor. Microstructure analysis revealed the presence of defect-free dislocation channels and strain-induced twins, indicative of loading at a stress level close to yield stress at least once while in service. Primary radiation-induced Ni/Si precipitates were likely destroyed during channel and twin formation, and secondary, significantly coarser Ni/Si precipitates formed inside the newly formed dislocation channels and along ∑3 boundaries during the continued irradiation. Complex chemistry inside the strain-induced features may overlap with dislocation pileups and impact localized corrosion and material long-term performance.

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来源期刊

Scripta Materialia 工程技术-材料科学：综合

CiteScore

11.40

自引率

5.00%

发文量

581

审稿时长

34 days

期刊介绍： Scripta Materialia is a LETTERS journal of Acta Materialia, providing a forum for the rapid publication of short communications on the relationship between the structure and the properties of inorganic materials. The emphasis is on originality rather than incremental research. Short reports on the development of materials with novel or substantially improved properties are also welcomed. Emphasis is on either the functional or mechanical behavior of metals, ceramics and semiconductors at all length scales.