双锗层 MAX 相 Cr2Ge2C 的结构、电子和磁性能:DFT 研究

IF 3.1 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
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引用次数: 0

摘要

我们采用广义梯度近似 GGA 和 GGA+U 的密度泛函理论(DFT)研究了新型 MAX 相 Cr2Ge2C 的磁稳定性和电子特性。我们的工作对新型纳米层状化合物 Cr2Ge2C 进行了预测计算,并将其与含 Ge 的 M2AX 相进行了比较,用 GGA 近似法预测了 NM 磁基态,用 GGA+U 方法预测了 AFM 构型。我们的结果表明,加入 Ge 层后,总磁矩和部分磁矩迅速减小至零。由于额外的 Ge 层,Cr2Ge2C 在费米级的 TDOS 与 Cr2GeC 相比略有降低,Cr-C 键与另一项研究 Cr2GeC 相比变得更加共价。最后,我们希望对新型 MAX 相材料的理论研究是一个大家族中的第一个,这将为未来的实验人员和理论人员提供更多的帮助。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Structural, electronic and magnetic properties of double-Ge-layer MAX phase Cr2Ge2C: DFT study

Structural, electronic and magnetic properties of double-Ge-layer MAX phase Cr2Ge2C: DFT study

The magnetic stability and electronic properties of a new MAX phase Cr2Ge2C are investigated using density functional theory (DFT) with the generalized gradient approximation GGA and GGA+U. Our work conducted predictive calculation of new nanolaminate Cr2Ge2C followed comparison with Ge-containing M2AX phases, the magnetic ground states are predicted as NM with GGA approximation and AFM configuration with GGA+U method. Our result have shown that the total and partial magnetic moment are greatly decreased rapidly to zero by adding Ge layer. Due to the extra Ge-layers, the TDOS of the Cr2Ge2C at the Fermi level reduces slightly compared with Cr2GeC and the Cr–C bond becomes more covalent compared with another study Cr2GeC. Finally, we hope that the theoretical study of the new MAX phase material is the first of a large family, which will give a plus in the future for experimenters and theoreticians.

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来源期刊
Computational Materials Science
Computational Materials Science 工程技术-材料科学:综合
CiteScore
6.50
自引率
6.10%
发文量
665
审稿时长
26 days
期刊介绍: The goal of Computational Materials Science is to report on results that provide new or unique insights into, or significantly expand our understanding of, the properties of materials or phenomena associated with their design, synthesis, processing, characterization, and utilization. To be relevant to the journal, the results should be applied or applicable to specific material systems that are discussed within the submission.
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