用自由体积概念解释掺杂空穴和/或电子诱导的超导穹顶

IF 3.4 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

International Journal of Mechanical and Materials Engineering Pub Date : 2024-08-21 DOI:10.1186/s40712-024-00159-7

Tian Hao

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引用次数: 0

摘要

基于自由体积概念，我们采用了之前工作中开发的、不受特定材料限制的传导方程来探索超导转变温度\(T_{c}\)是如何随掺杂空穴或电子浓度的变化而变化的。所预测的关系被用来拟合文献中的实验数据，结果与观测数据十分吻合。我们的发现可以为在许多超导体中观察到的掺杂诱导圆顶和/或双圆顶a-dip现象提供另一种解释。

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Doped holes and/or electrons induced superconductivity domes explained with the free volume concept

The conductivity equation developed in our previous work without any restrictions to specific materials is employed to explore how superconductivity transition temperature \(T_{c}\) changes with the doped hole or electron concentrations based on the free volume concept. The predicted relationship is used to fit experimental data available in the literature and a good agreement with observations is achieved. Our findings may provide an alternative explanation for doping-induced domes and/or double domes with a-dip phenomena observed among many superconductors.

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来源期刊

International Journal of Mechanical and Materials Engineering MATERIALS SCIENCE, MULTIDISCIPLINARY-

CiteScore

8.60

自引率

0.00%

发文量

审稿时长

13 weeks