用于热电应用的石墨烧结钛酸锶镨包晶石

IF 4.3 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
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引用次数: 0

摘要

在 Sr1-x PrxTiO3(x = 0.05、0.075、0.10、0.125、0.15、0.20)体系中的 Sr2+ 位引入 Pr3+,然后进行两步石墨埋藏烧结。粉末还原有助于提高载流子浓度,而掺杂样品颗粒还原则通过调节点缺陷,将晶界锶和氧空位产生的双肖特基势垒降至最低。x ≥ 0.10 的样品在 XRD 中显示出 (200) 和 (310) 峰的分裂和不对称,表明其结构从立方相转变为四方相。样品的 XPS 光谱证实了氧空位的形成和 Ti4+ 在石墨埋藏烧结过程中还原成 Ti3+,从而导致载流子浓度增加。Sr0.9 Pr0.1TiO3 样品在 673 K 时的最大功率因数为 1.8 mW/mK2。由于多孔结构、Pr 缺陷中心、氧空位簇导致热导率降低,加上功率因数的提高,其最大优点系数为 0.33,使其成为热电发生器中 n 型支脚的理想候选材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Graphite sintered strontium praseodymium titanate perovskite for thermoelectric applications

Graphite sintered strontium praseodymium titanate perovskite for thermoelectric applications

Here Pr3+ was introduced in the Sr2+ site in Sr1-x PrxTiO3 (x = 0.05, 0.075, 0.10, 0.125, 0.15, 0.20) system followed by two step graphite burial sintering. Powder reduction helps to increase the carrier concentration and the doped sample pellet reduction minimizes Double Schottky Barrier generated by strontium and oxygen vacancies at grain boundary by regulating the point defects. Samples with x ≥ 0.10 shows splitting and asymmetry of (200) and (310) peak in XRD indicating structural transformation from cubic to tetragonal phase. XPS spectra of the samples confirmed the formation of oxygen vacancies and reduction of Ti4+ to Ti3+ induced by graphite burial sintering resulting in enhanced carrier concentration. A maximum power factor of 1.8 mW/mK2 was obtained for Sr0.9 Pr0.1TiO3 samples at 673 K. Reduced thermal conductivity due to porous structure, Pr defect centers, oxygen vacancy clusters together with enhanced power factor lead to a maximum figure of merit 0.33, making this an ideal candidate as n type legs in thermoelectric generators.

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来源期刊
Materials Chemistry and Physics
Materials Chemistry and Physics 工程技术-材料科学:综合
CiteScore
8.70
自引率
4.30%
发文量
1515
审稿时长
69 days
期刊介绍: Materials Chemistry and Physics is devoted to short communications, full-length research papers and feature articles on interrelationships among structure, properties, processing and performance of materials. The Editors welcome manuscripts on thin films, surface and interface science, materials degradation and reliability, metallurgy, semiconductors and optoelectronic materials, fine ceramics, magnetics, superconductors, specialty polymers, nano-materials and composite materials.
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