用于光电和自旋电子学应用的块状立方包晶 RbTaO3 和表面 (0 0 1) 的光电和结构特性

IF 4.3 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
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引用次数: 0

摘要

我们采用第一原理密度泛函理论(DFT)研究了RbTaO3立方包晶的块体和表面(0 0 1)形式的光学、电子和结构特性。RbTaO3 体系表现出半导体特性,带隙 (Eg) 为 2.20 eV。它显示出弱反射性、优异的光导性和对入射高能光子的高吸收性,这表明它具有光电应用的潜力。对于表面 (0 0 1),我们构建了两个 RbO 和 TaO2 端面。我们计算了两种端点的原子位移(ΔZ)和表面能(Esurf)。RbO- 和 TaO2-(0 0 1) 端面呈现半金属铁磁性 (HMF),自旋磁矩整数值为 1.00 μβ,完全自旋极化 (SP) 为 100%。RbO- 和 TaO2 端接的 Eg 分别为 2.60 eV 和 2.30 eV,这表明它们具有自旋电子学的潜力。我们还分析和比较了 (0 0 1)-RbTaO3 端接与主体系统的光学特性和原子群 (Q) 及其变化 (ΔQ)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Optoelectronic and structural properties of bulk cubic perovskite RbTaO3 and surface (0 0 1) for optoelectronic and spintronics applications

We used first-principles density functional theory (DFT) to study the optical, electronic, and structural properties of RbTaO3 cubic perovskite in both bulk and surface (0 0 1) forms. The RbTaO3 bulk system exhibited semiconducting behaviour with a band gap (Eg) of 2.20 eV. It showed weak reflectivity, excellent optical conductivity, and high absorption of incident energetic photons, indicating its potential for optoelectronic applications. For the surface (0 0 1), two RbO and TaO2 terminations were constructed. We calculate the atomic displacement (ΔZ) and surface energy (Esurf) for both terminations. The RbO- and TaO2-(0 0 1) terminated surfaces appeared half-metallic ferromagnetic (HMF) with a spin magnetic moment of integer value 1.00 μβ and fully spin polarization (SP) 100 %. The Eg for RbO- and TaO2-terminations were 2.60 eV and 2.30 eV, respectively, suggesting their potential for spintronics. We also analysed and compared the optical properties and atomic populations (Q) and their variation (ΔQ) for (0 0 1)-RbTaO3 terminations with the bulk system.

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来源期刊
Materials Chemistry and Physics
Materials Chemistry and Physics 工程技术-材料科学:综合
CiteScore
8.70
自引率
4.30%
发文量
1515
审稿时长
69 days
期刊介绍: Materials Chemistry and Physics is devoted to short communications, full-length research papers and feature articles on interrelationships among structure, properties, processing and performance of materials. The Editors welcome manuscripts on thin films, surface and interface science, materials degradation and reliability, metallurgy, semiconductors and optoelectronic materials, fine ceramics, magnetics, superconductors, specialty polymers, nano-materials and composite materials.
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