提高用掺锡 CuS 纳米结构制造的光电探测器的 FOM

IF 3.4 3区 化学 Q2 CHEMISTRY, INORGANIC & NUCLEAR
Mehrdad Kavosh , Farid Jamali-Sheini , Mohsen Cheraghizade , Ramin Yousefi
{"title":"提高用掺锡 CuS 纳米结构制造的光电探测器的 FOM","authors":"Mehrdad Kavosh ,&nbsp;Farid Jamali-Sheini ,&nbsp;Mohsen Cheraghizade ,&nbsp;Ramin Yousefi","doi":"10.1016/j.solidstatesciences.2024.107653","DOIUrl":null,"url":null,"abstract":"<div><p>The Sn-doped CuS nanostructures with different Sn-doping concentrations (Sn<sub>1</sub> (5 %), Sn<sub>2</sub> (10 %), and Sn<sub>3</sub> (15 %)) were synthesized by the sonochemical method. Due to the difference in ionic radii between Cu and Sn, the stress in the CuS crystal was increased from 41 × 10<sup>−4</sup> for the undoped sample to 50 × 10<sup>−4</sup> for the Sn<sub>2</sub>-doped sample. The absorption of visible light by the doped samples was increased dramatically. The morphology of CuS nanostructures was changed from nanoparticles (NPs) in the undoped CuS to nanoplates in the Sn<sub>2</sub>-doped CuS. Finally, the optoelectronic applications of the samples were studied, and it was shown that all the samples responded to the visible light source, and their resistance was decreased due to light radiation. The results indicated that specific detectivity (<em>D*</em>), responsivity (<em>R</em>), and sensitivity (<em>S</em>) as the figure-of-merit (FOM) of the photodetectors were increased from 2.07 × 10<sup>9</sup> Jones, 0.92 mA W⁻<sup>1</sup>, and 1328 % for undoped CuS nanostructures to 65.22 × 10<sup>9</sup> Jones, 28.27 mA W⁻<sup>1</sup>, and 3802 % for the Sn<sub>2</sub>-doped CuS nanostructures. The Mott-Schottky (M − S) results indicated that a higher acceptor carrier concentration in the Sn-doped CuS compared to undoped CuS was one of the most critical factors in enhancing the FOM of the photodetectors fabricated with Sn-doped CuS nanostructures.</p></div>","PeriodicalId":432,"journal":{"name":"Solid State Sciences","volume":"156 ","pages":"Article 107653"},"PeriodicalIF":3.4000,"publicationDate":"2024-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Improving the FOM of photodetectors fabricated by Sn-doped CuS nanostructures\",\"authors\":\"Mehrdad Kavosh ,&nbsp;Farid Jamali-Sheini ,&nbsp;Mohsen Cheraghizade ,&nbsp;Ramin Yousefi\",\"doi\":\"10.1016/j.solidstatesciences.2024.107653\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The Sn-doped CuS nanostructures with different Sn-doping concentrations (Sn<sub>1</sub> (5 %), Sn<sub>2</sub> (10 %), and Sn<sub>3</sub> (15 %)) were synthesized by the sonochemical method. Due to the difference in ionic radii between Cu and Sn, the stress in the CuS crystal was increased from 41 × 10<sup>−4</sup> for the undoped sample to 50 × 10<sup>−4</sup> for the Sn<sub>2</sub>-doped sample. The absorption of visible light by the doped samples was increased dramatically. The morphology of CuS nanostructures was changed from nanoparticles (NPs) in the undoped CuS to nanoplates in the Sn<sub>2</sub>-doped CuS. Finally, the optoelectronic applications of the samples were studied, and it was shown that all the samples responded to the visible light source, and their resistance was decreased due to light radiation. The results indicated that specific detectivity (<em>D*</em>), responsivity (<em>R</em>), and sensitivity (<em>S</em>) as the figure-of-merit (FOM) of the photodetectors were increased from 2.07 × 10<sup>9</sup> Jones, 0.92 mA W⁻<sup>1</sup>, and 1328 % for undoped CuS nanostructures to 65.22 × 10<sup>9</sup> Jones, 28.27 mA W⁻<sup>1</sup>, and 3802 % for the Sn<sub>2</sub>-doped CuS nanostructures. The Mott-Schottky (M − S) results indicated that a higher acceptor carrier concentration in the Sn-doped CuS compared to undoped CuS was one of the most critical factors in enhancing the FOM of the photodetectors fabricated with Sn-doped CuS nanostructures.</p></div>\",\"PeriodicalId\":432,\"journal\":{\"name\":\"Solid State Sciences\",\"volume\":\"156 \",\"pages\":\"Article 107653\"},\"PeriodicalIF\":3.4000,\"publicationDate\":\"2024-08-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solid State Sciences\",\"FirstCategoryId\":\"92\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1293255824002188\",\"RegionNum\":3,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"CHEMISTRY, INORGANIC & NUCLEAR\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid State Sciences","FirstCategoryId":"92","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1293255824002188","RegionNum":3,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, INORGANIC & NUCLEAR","Score":null,"Total":0}
引用次数: 0

摘要

利用声化学法合成了不同掺杂浓度(Sn1 (5%)、Sn2 (10%) 和 Sn3 (15%))的掺锡 CuS 纳米结构。由于铜和锡的离子半径不同,CuS 晶体中的应力从未掺杂样品的 41 × 10-4 增加到掺杂 Sn2 样品的 50 × 10-4。掺杂样品对可见光的吸收显著增加。CuS 纳米结构的形态从未掺杂 CuS 的纳米颗粒(NPs)变为掺杂 Sn2 的 CuS 纳米板。最后,对样品的光电应用进行了研究,结果表明所有样品都对可见光光源有响应,其电阻因光辐射而降低。结果表明,光电探测器的比检出率(D*)、响应率(R)和灵敏度(S)作为优点系数(FOM)从未掺杂 CuS 纳米结构的 2.07 × 109 Jones、0.92 mA W-1 和 1328 % 增加到掺杂 Sn2 的 CuS 纳米结构的 65.22 × 109 Jones、28.27 mA W-1 和 3802 %。莫特-肖特基(M - S)结果表明,与未掺杂 CuS 相比,掺Sn CuS 中更高的受体载流子浓度是提高用掺Sn CuS 纳米结构制造的光电探测器 FOM 的最关键因素之一。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Improving the FOM of photodetectors fabricated by Sn-doped CuS nanostructures

Improving the FOM of photodetectors fabricated by Sn-doped CuS nanostructures

The Sn-doped CuS nanostructures with different Sn-doping concentrations (Sn1 (5 %), Sn2 (10 %), and Sn3 (15 %)) were synthesized by the sonochemical method. Due to the difference in ionic radii between Cu and Sn, the stress in the CuS crystal was increased from 41 × 10−4 for the undoped sample to 50 × 10−4 for the Sn2-doped sample. The absorption of visible light by the doped samples was increased dramatically. The morphology of CuS nanostructures was changed from nanoparticles (NPs) in the undoped CuS to nanoplates in the Sn2-doped CuS. Finally, the optoelectronic applications of the samples were studied, and it was shown that all the samples responded to the visible light source, and their resistance was decreased due to light radiation. The results indicated that specific detectivity (D*), responsivity (R), and sensitivity (S) as the figure-of-merit (FOM) of the photodetectors were increased from 2.07 × 109 Jones, 0.92 mA W⁻1, and 1328 % for undoped CuS nanostructures to 65.22 × 109 Jones, 28.27 mA W⁻1, and 3802 % for the Sn2-doped CuS nanostructures. The Mott-Schottky (M − S) results indicated that a higher acceptor carrier concentration in the Sn-doped CuS compared to undoped CuS was one of the most critical factors in enhancing the FOM of the photodetectors fabricated with Sn-doped CuS nanostructures.

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来源期刊
Solid State Sciences
Solid State Sciences 化学-无机化学与核化学
CiteScore
6.60
自引率
2.90%
发文量
214
审稿时长
27 days
期刊介绍: Solid State Sciences is the journal for researchers from the broad solid state chemistry and physics community. It publishes key articles on all aspects of solid state synthesis, structure-property relationships, theory and functionalities, in relation with experiments. Key topics for stand-alone papers and special issues: -Novel ways of synthesis, inorganic functional materials, including porous and glassy materials, hybrid organic-inorganic compounds and nanomaterials -Physical properties, emphasizing but not limited to the electrical, magnetical and optical features -Materials related to information technology and energy and environmental sciences. The journal publishes feature articles from experts in the field upon invitation. Solid State Sciences - your gateway to energy-related materials.
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