用于提高超薄双 SOI LDMOS 性能的新型动态背栅控制技术

IF 1.3 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Man Li, Anqi Liu, Jiafei Yao, Jun Zhang, Zixuan Wang, Fanyu Liu, Yufeng Guo
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引用次数: 0

摘要

针对具有重掺杂漂移区的超薄双层硅绝缘体(DSOI)侧面双扩散金属氧化物半导体(LDMOS)开发了新的性能改进技术,并使用 TCAD 和电路分析高级应用模块(CA-AAM)对其进行了仿真。我们提出了一种外围电路,用于动态控制 DSOI 的独立后栅电极,导通时偏置为零,关断时偏置为负。为了保持较低的比导通电阻(Ron,sp),设计了一个重掺杂漂移区,负的后栅偏压将引起正电荷,以补偿重掺杂的电离受体。这就提高了击穿电压 (BV)。因此,它重建了传统的降低表面电场(RESURF)条件。结果表明,与传统的 RESURF 技术相比,所开发的技术在 BV、Ron、sp、关断状态漏电流、导通状态电流、峰值跨导、截止频率、关断时间、巴利加优点系数 (BFOM) 和优点系数 (FOM) 方面都实现了优化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Novel dynamic back-gate control technology for performance improvement in ultrathin double SOI LDMOS

Novel dynamic back-gate control technology for performance improvement in ultrathin double SOI LDMOS

Novel performance improvement technology is developed for an ultrathin Double Silicon-on-Insulator (DSOI) Lateral Double-diffused Metal–Oxide–Semiconductor (LDMOS) with a heavy doping drift region, which is simulated using TCAD and an advanced application module for circuit analysis (CA-AAM). A peripheral circuit was proposed to dynamically control the independent back-gate electrode of the DSOI, with a zero bias for the ON-state and a negative bias for the OFF-state. A heavily doped drift region was designed to maintain a low specific on-resistance (Ron,sp), where a negative back-gate bias would induce positive charges to compensate for the heavily doped ionized acceptors. This results in an improved breakdown voltage (BV). Therefore, it rebuilds the traditional reduced surface field (RESURF) condition. Results indicate that the developed technology exhibits optimization in terms of the BV, Ron,sp, OFF-state leakage current, ON-state current, peak transconductance, cut-off frequency, turn-off time, Baliga’s figure of merits (BFOM), and figure of merits (FOM) when compared with the conventional RESURF technology.

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来源期刊
Journal of Power Electronics
Journal of Power Electronics 工程技术-工程:电子与电气
CiteScore
2.30
自引率
21.40%
发文量
195
审稿时长
3.6 months
期刊介绍: The scope of Journal of Power Electronics includes all issues in the field of Power Electronics. Included are techniques for power converters, adjustable speed drives, renewable energy, power quality and utility applications, analysis, modeling and control, power devices and components, power electronics education, and other application.
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