{"title":"沉积周期和退火对快速 S-SILAR 技术获得的 SnS 薄膜的结构、光学、电学和光致发光特性的影响","authors":"Pawan Kumar, Gowrish K. Rao","doi":"10.1007/s12648-024-03349-3","DOIUrl":null,"url":null,"abstract":"<p>In this paper, we present an optimized procedure for depositing SnS thin films using the rapid S-SILAR technique. We also analyze the effects of deposition cycles and post-deposition annealing on various film properties. XRD analysis indicates the presence of orthorhombic and cubic phases in the films. Energy dispersive X-ray analysis confirms near-optimal stoichiometry. SEM images depict the growth of closely spaced spherical granules. High optical absorption is observed in the mid-visible to NIR region, with the absorption edge shifting towards the NIR region after annealing. The bandgap values range from 1.6 eV to 1.9 eV, which is ideal for photovoltaic applications. PL spectra show three clusters of peaks corresponding to red and green emissions. Hall measurements confirm that both the as-deposited and annealed SnS films exhibit p-type conductivity, with a hole concentration on the order of 10<sup>15</sup> cm<sup>−3</sup>.</p>","PeriodicalId":584,"journal":{"name":"Indian Journal of Physics","volume":null,"pages":null},"PeriodicalIF":1.6000,"publicationDate":"2024-08-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of deposition cycle and annealing on the structural, optical, electrical, and photoluminescence properties of SnS films obtained from rapid S-SILAR technique\",\"authors\":\"Pawan Kumar, Gowrish K. Rao\",\"doi\":\"10.1007/s12648-024-03349-3\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>In this paper, we present an optimized procedure for depositing SnS thin films using the rapid S-SILAR technique. We also analyze the effects of deposition cycles and post-deposition annealing on various film properties. XRD analysis indicates the presence of orthorhombic and cubic phases in the films. Energy dispersive X-ray analysis confirms near-optimal stoichiometry. SEM images depict the growth of closely spaced spherical granules. High optical absorption is observed in the mid-visible to NIR region, with the absorption edge shifting towards the NIR region after annealing. The bandgap values range from 1.6 eV to 1.9 eV, which is ideal for photovoltaic applications. PL spectra show three clusters of peaks corresponding to red and green emissions. Hall measurements confirm that both the as-deposited and annealed SnS films exhibit p-type conductivity, with a hole concentration on the order of 10<sup>15</sup> cm<sup>−3</sup>.</p>\",\"PeriodicalId\":584,\"journal\":{\"name\":\"Indian Journal of Physics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.6000,\"publicationDate\":\"2024-08-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Indian Journal of Physics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1007/s12648-024-03349-3\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Indian Journal of Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1007/s12648-024-03349-3","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
摘要
本文介绍了利用快速 S-SILAR 技术沉积 SnS 薄膜的优化程序。我们还分析了沉积周期和沉积后退火对各种薄膜特性的影响。XRD 分析表明薄膜中存在正方和立方相。能量色散 X 射线分析证实了接近最佳的化学计量。扫描电子显微镜(SEM)图像描绘了紧密间隔的球形颗粒的生长过程。在中可见光到近红外区域观察到高光学吸收,退火后吸收边缘向近红外区域移动。带隙值在 1.6 eV 至 1.9 eV 之间,非常适合光伏应用。PL 光谱显示出三个峰群,分别对应于红色和绿色发射。霍尔测量证实,沉积和退火后的 SnS 薄膜都具有 p 型导电性,空穴浓度约为 1015 cm-3。
Effect of deposition cycle and annealing on the structural, optical, electrical, and photoluminescence properties of SnS films obtained from rapid S-SILAR technique
In this paper, we present an optimized procedure for depositing SnS thin films using the rapid S-SILAR technique. We also analyze the effects of deposition cycles and post-deposition annealing on various film properties. XRD analysis indicates the presence of orthorhombic and cubic phases in the films. Energy dispersive X-ray analysis confirms near-optimal stoichiometry. SEM images depict the growth of closely spaced spherical granules. High optical absorption is observed in the mid-visible to NIR region, with the absorption edge shifting towards the NIR region after annealing. The bandgap values range from 1.6 eV to 1.9 eV, which is ideal for photovoltaic applications. PL spectra show three clusters of peaks corresponding to red and green emissions. Hall measurements confirm that both the as-deposited and annealed SnS films exhibit p-type conductivity, with a hole concentration on the order of 1015 cm−3.
期刊介绍:
Indian Journal of Physics is a monthly research journal in English published by the Indian Association for the Cultivation of Sciences in collaboration with the Indian Physical Society. The journal publishes refereed papers covering current research in Physics in the following category: Astrophysics, Atmospheric and Space physics; Atomic & Molecular Physics; Biophysics; Condensed Matter & Materials Physics; General & Interdisciplinary Physics; Nonlinear dynamics & Complex Systems; Nuclear Physics; Optics and Spectroscopy; Particle Physics; Plasma Physics; Relativity & Cosmology; Statistical Physics.