利用纳米激光直写技术制造大面积超导纳米线阵列

Yicong Huang, Yao Wu, Haohui Zhang, Han Zhou, Wenzhi Zhang, Enhua Chen, Wenqian Liu, Chaoyun Zhang, Shangqing Li, Xiaoliang Wang, Daqian Liu, Xiuyan Peng and Jianxin Lin
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摘要

我们报告了基于纳米激光直写(NLDW)的超导纳米线阵列的制造、结构和电传输特性。实验分析和模拟了基于 NLDW 和超导铌薄膜之间相互作用的热激发微/纳米制造。实验结果表明,超导纳米线阵列的面积为 190 × 190,临界转变温度 Tc 为 7.8 K,4.0 K 时的临界电流密度 Jc 为 20.8 MA cm-2。通过调整激光功率、照射间隙和点延迟等参数,可以进一步优化超导纳米线的宽度。与电子束光刻和聚焦离子束相比,基于 NLDW 的纳米线制造工艺在一定程度上为制造大面积超导电路和器件提供了一条更高效、更经济的途径。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Large-area superconducting nanowire arrays fabricated by nano laser direct writing
We report on the fabrication, structural, and electrical transport characterizations of superconducting nanowire arrays based on nano-laser direct writing (NLDW). The thermal excitation-induced micro/nano fabrication based on the interactions between NLDW and superconducting Nb films was experimentally analyzed and simulated. Experimentally, the arrays of superconducting nanowires have an area of 190 × 190 with a critical transition temperature Tc of 7.8 K and a critical current density Jc of 20.8 MA cm−2 at 4.0 K. The width and arrangement of the nanowires are precisely controlled, exhibiting a minimal loss of 0.6 K in Tc and excellent Jc after LDW. The width of superconducting nanowires could be further optimized by adjusting parameters such as laser power, irradiation gap, and delay of points. Compared with electron beam lithography and focused ion beam, to some extent, the nanowires fabrication process based on NLDW provides a more efficient and cost-effective path for fabricating large-area superconducting circuits and devices.
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