Ding Wang, Ping Wang, Shubham Mondal, Mingtao Hu, Yuanpeng Wu, Danhao Wang, Kai Sun, Zetian Mi
{"title":"沃特兹铁电体的纳米工程:揭示 ScAlN 纳米线中的相变和铁电转换","authors":"Ding Wang, Ping Wang, Shubham Mondal, Mingtao Hu, Yuanpeng Wu, Danhao Wang, Kai Sun, Zetian Mi","doi":"arxiv-2408.02576","DOIUrl":null,"url":null,"abstract":"The pursuit of extreme device miniaturization and the exploration of novel\nphysical phenomena have spurred significant interest in crystallographic phase\ncontrol and ferroelectric switching in reduced dimensions. Recently, wurtzite\nferroelectrics have emerged as a new class of functional materials, offering\nintriguing piezoelectric and ferroelectric properties, CMOS compatibility, and\nseamless integration with mainstream semiconductor technology. However, the\nexploration of crystallographic phase and ferroelectric switching in reduced\ndimensions, especially in nanostructures, has remained a largely uncharted\nterritory. In this study, we present the first comprehensive investigation into\nthe crystallographic phase transition of ScAlN nanowires across the full Sc\ncompositional range. While a gradual transition from wurtzite to cubic phase\nwas observed with increasing Sc composition, we further demonstrated that a\nhighly ordered wurtzite phase ScAlN could be confined at the ScAlN/GaN\ninterface for Sc contents surpassing what is possible in conventional films,\nholding great potential to addressing the fundamental high coercive field of\nwurtzite ferroelectrics. In addition, we provide the first evidence of\nferroelectric switching in ScAlN nanowires, a result that holds significant\nimplications for future device miniaturization. Our demonstration of tunable\nferroelectric ScAlN nanowires opens new possibilities for nanoscale, domain,\nalloy, strain, and quantum engineering of wurtzite ferroelectrics, representing\na significant stride towards the development of next-generation, miniaturized\ndevices based on wurtzite ferroelectrics.","PeriodicalId":501083,"journal":{"name":"arXiv - PHYS - Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2024-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Nanoscale Engineering of Wurtzite Ferroelectrics: Unveiling Phase Transition and Ferroelectric Switching in ScAlN Nanowires\",\"authors\":\"Ding Wang, Ping Wang, Shubham Mondal, Mingtao Hu, Yuanpeng Wu, Danhao Wang, Kai Sun, Zetian Mi\",\"doi\":\"arxiv-2408.02576\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The pursuit of extreme device miniaturization and the exploration of novel\\nphysical phenomena have spurred significant interest in crystallographic phase\\ncontrol and ferroelectric switching in reduced dimensions. Recently, wurtzite\\nferroelectrics have emerged as a new class of functional materials, offering\\nintriguing piezoelectric and ferroelectric properties, CMOS compatibility, and\\nseamless integration with mainstream semiconductor technology. However, the\\nexploration of crystallographic phase and ferroelectric switching in reduced\\ndimensions, especially in nanostructures, has remained a largely uncharted\\nterritory. In this study, we present the first comprehensive investigation into\\nthe crystallographic phase transition of ScAlN nanowires across the full Sc\\ncompositional range. While a gradual transition from wurtzite to cubic phase\\nwas observed with increasing Sc composition, we further demonstrated that a\\nhighly ordered wurtzite phase ScAlN could be confined at the ScAlN/GaN\\ninterface for Sc contents surpassing what is possible in conventional films,\\nholding great potential to addressing the fundamental high coercive field of\\nwurtzite ferroelectrics. In addition, we provide the first evidence of\\nferroelectric switching in ScAlN nanowires, a result that holds significant\\nimplications for future device miniaturization. Our demonstration of tunable\\nferroelectric ScAlN nanowires opens new possibilities for nanoscale, domain,\\nalloy, strain, and quantum engineering of wurtzite ferroelectrics, representing\\na significant stride towards the development of next-generation, miniaturized\\ndevices based on wurtzite ferroelectrics.\",\"PeriodicalId\":501083,\"journal\":{\"name\":\"arXiv - PHYS - Applied Physics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-08-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"arXiv - PHYS - Applied Physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/arxiv-2408.02576\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"arXiv - PHYS - Applied Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/arxiv-2408.02576","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Nanoscale Engineering of Wurtzite Ferroelectrics: Unveiling Phase Transition and Ferroelectric Switching in ScAlN Nanowires
The pursuit of extreme device miniaturization and the exploration of novel
physical phenomena have spurred significant interest in crystallographic phase
control and ferroelectric switching in reduced dimensions. Recently, wurtzite
ferroelectrics have emerged as a new class of functional materials, offering
intriguing piezoelectric and ferroelectric properties, CMOS compatibility, and
seamless integration with mainstream semiconductor technology. However, the
exploration of crystallographic phase and ferroelectric switching in reduced
dimensions, especially in nanostructures, has remained a largely uncharted
territory. In this study, we present the first comprehensive investigation into
the crystallographic phase transition of ScAlN nanowires across the full Sc
compositional range. While a gradual transition from wurtzite to cubic phase
was observed with increasing Sc composition, we further demonstrated that a
highly ordered wurtzite phase ScAlN could be confined at the ScAlN/GaN
interface for Sc contents surpassing what is possible in conventional films,
holding great potential to addressing the fundamental high coercive field of
wurtzite ferroelectrics. In addition, we provide the first evidence of
ferroelectric switching in ScAlN nanowires, a result that holds significant
implications for future device miniaturization. Our demonstration of tunable
ferroelectric ScAlN nanowires opens new possibilities for nanoscale, domain,
alloy, strain, and quantum engineering of wurtzite ferroelectrics, representing
a significant stride towards the development of next-generation, miniaturized
devices based on wurtzite ferroelectrics.