用于气相金属辅助硅化学蚀刻的无提升催化剂

Hanna Ohlin, Bryan Benz, Lucia Romano, Ulrich Vogt
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引用次数: 0

摘要

金属辅助化学蚀刻硅是制造高纵横比纳米结构的一种可行方法。为了确定催化剂的图案,通常采用掀离工艺。然而,由于成品率低,特别是对于较小的结构而言,掀离步骤往往是一个工艺瓶颈。为了绕过脱模工艺,可以采用其他方法,如选择性电镀。在本文中,我们提出了一种用于气相金属辅助化学蚀刻的电镀双层催化剂,以替代常用的脱模工艺。我们成功地在气相中蚀刻了样品,所得结构的特征尺寸小于 10 纳米。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Lift-off free catalyst for metal assisted chemical etching of silicon in vapour phase
Metal-assisted chemical etching of silicon is a promising method for fabricating nanostructures with a high aspect ratio. To define a pattern for the catalyst, lift-off processes are commonly used. The lift-off step however is often a process bottle neck due to low yield, especially for smaller structures. To bypass the lift-off process, other methods such as electroplating can be utilized. In this paper, we suggest an electroplated bi-layer catalyst for vapour phase metal-assisted chemical etching as an alternative to the commonly utilised lift-off process. Samples were successfully etched in vapour, and resulting structures had feature sizes down to 10 nm.
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