了解胶体二维多层 MAPbBr3 珍珠岩纳米片中的光电过程:漏斗、重组和自俘获激子

André Niebur, Eugen Klein, Rostyslav Lesyuk, Christian Klinke, Jannika Lauth
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摘要

准二维(2D)胶体合成技术使得量子禁锢技术在包晶石中的应用变得非常容易,从而为包晶发光二极管(perovskiteLED)的研究和发光带来了新的动力。超薄的过氧化物层具有很高的激子结合能和有益的电荷传输特性,对太阳能电池很有意义。在二维过氧化物中,不同厚度层的组合有助于有针对性地将电荷载流子引向带隙较小的较厚层。然而,人们对激子和电荷载流子在这些结构中的漏斗和重组机制还缺乏详细的了解。在这里,我们通过飞秒瞬态吸收光谱和时间分辨光致发光表征了胶体二维甲基溴化铵铅(MAPbBr3)Ruddlesden-Popper 包晶石,这些包晶石具有广泛的层组合(n =3 到 10,以及 n > 10 的体分数),从而全面揭示了漏斗和重组过程的复杂性。我们发现,在 MAPbBr3 纳米片中,光激发后的二阶和三阶过程占主导地位,这表明存在激子-激子湮灭(EEA)和奥格重组。薄层中的长寿命激子(如 n = 5,Eb = 136 meV)在 t = 10-50 ps 的时间内漏斗进入高 n,从而使激子结合能降低到 kB T = 26 meV 以下(T = 300K),导致辐射对撞。平行漏斗效应和连续漏斗效应与激子捕获过程相竞争,因此当存在高质量 n-n 接口时,漏斗效应是克服激子自捕获的绝佳工具。另一方面,高 n 区中的自由电荷载流子会促进辐射重组,从而绕过 EEA,这对于 LED 和发光应用来说是非常理想的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Understanding the Optoelectronic Processes in Colloidal 2D Multi-Layered MAPbBr3 Perovskite Nanosheets: Funneling, Recombination and Self-Trapped Excitons
Quasi two-dimensional (2D) colloidal synthesis made quantum confinement readily accessible in perovskites, generating additional momentum in perovskite LED research and lasing. Ultrathin perovskite layers exhibit high exciton binding energies and beneficial charge transport properties interesting for solar cells. In 2D perovskites, the combination of layers with different thickness helps to direct charge carriers in a targeted manner toward thicker layers with a smaller bandgap. However, detailed knowledge about the mechanisms by which excitons and charge carriers funnel and recombine in these structures is lacking. Here, we characterize colloidal 2D methylammonium lead bromide (MAPbBr3) Ruddlesden-Popper perovskites with a broad combination of layers (n = 3 to 10, and bulk fractions with n > 10) in one stack by femtosecond transient absorption spectroscopy and time-resolved photoluminescence, which gives comprehensive insights into the complexity of funneling and recombination processes. We find that after photoexcitation second- and third-order processes dominate in MAPbBr3 nanosheets, which indicates exciton-exciton annihilation (EEA) and Auger recombination. Long-lived excitons in thin layers (e.g., n = 5, Eb = 136 meV) funnel into high n with t = 10-50 ps, which decreases their exciton binding energy below kB T = 26 meV ( T = 300K) and leads to radiative recombination. Parallel and consecutive funneling compete with exciton trapping processes, making funneling an excellent tool to overcome exciton self-trapping when high-quality n-n interfaces are present. Free charge carriers in high n regions on the other hand facilitate radiative recombination and EEA is bypassed, which is desirable for LED and lasing applications.
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