半导体硅-硅-锗自旋 Qubits 中的声子诱导交换栅不忠实现象

Matthew Brooks, Rex Lundgren, Charles Tahan
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摘要

半导体自旋量子比特之间的自旋-自旋交换相互作用可以实现快速的单量子比特和双量子比特门。在交换过程中,量子比特与周围声子浴的耦合可能会导致产生的门出现误差。在这里,我们考虑了与有限温度声子浴耦合的硅-硅-锗异质结构中半导体双量子点自旋量子比特交换操作的保真度。通过采用主方程方法,可以解决每个自旋-声子耦合项的孤立效应以及编码量子位操作的泄漏误差。随着温度的升高,可以观察到误差的主要来源从两个电子自旋态的声子诱导扰动转变为声子诱导的激发轨道态耦合成为主要误差。此外,研究还表明,在脉冲形状和长度上进行简单的权衡,就能在栅极操作期间将自旋声子诱导误差的稳定性提高一个数量级。我们的研究结果表明,在 200-300 mK 的高温范围内,交换栅操作目前不受体声子的限制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Phonon-Induced Exchange Gate Infidelities in Semiconducting Si-SiGe Spin Qubits
Spin-spin exchange interactions between semiconductor spin qubits allow for fast single and two-qubit gates. During exchange, coupling of the qubits to a surrounding phonon bath may cause errors in the resulting gate. Here, the fidelities of exchange operations with semiconductor double quantum dot spin qubits in a Si-SiGe heterostructure coupled to a finite temperature phonon bath are considered. By employing a master equation approach, the isolated effect of each spin-phonon coupling term may be resolved, as well as leakage errors of encoded qubit operations. As the temperature is increased, a crossover is observed from where the primary source of error is due to a phonon induced perturbation of the two electron spin states, to one where the phonon induced coupling to an excited orbital state becomes the dominant error. Additionally, it is shown that a simple trade-off in pulse shape and length can improve robustness to spin-phonon induced errors during gate operations by up to an order of magnitude. Our results suggest that for elevated temperatures within 200-300 mK, exchange gate operations are not currently limited by bulk phonons. This is consistent with recent experiments.
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