{"title":"研究通过低压电弧放电沉积的氧化铜薄膜的电子和光学特性","authors":"L. Yu. Fedorov, A. V. Ushakov, I. V. Karpov","doi":"10.1134/S207511332470062X","DOIUrl":null,"url":null,"abstract":"<p><b>Abstract</b>—In this investigation, thin films of copper oxides obtained by arc deposition at low pressure on borosilicate glass are studied. The phase composition, structural characteristics, and chemical state of the samples are confirmed by X-ray diffraction and X-ray photoelectron spectroscopy. Hall measurements using the van der Pauw method show that films of both Cu<sub>2</sub>O and CuO phase compositions have hole conductivity (<i>p</i>-type). The concentration of charge carriers, mobility, and resistivity of the samples are determined. The formation of a heterojunction with a significant decrease in the concentration of charge carriers due to the recombination of electron–hole pairs is observed in a thin film of mixed composition (Cu<sub>2</sub>O/CuO). From UV-visible spectroscopy measurements, the absorption/transmission characteristics of the films are determined and the optical band gap is calculated. It is shown that change in the phase composition of the oxide from Cu<sub>2</sub>O to CuO leads to a decrease in the band gap from 1.90 to 1.34 eV.</p>","PeriodicalId":586,"journal":{"name":"Inorganic Materials: Applied Research","volume":"15 4","pages":"1077 - 1083"},"PeriodicalIF":0.5000,"publicationDate":"2024-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigation of Electronic and Optical Properties of Thin Films of Copper Oxides Deposited by Low-Pressure Arc Discharge\",\"authors\":\"L. Yu. Fedorov, A. V. Ushakov, I. V. Karpov\",\"doi\":\"10.1134/S207511332470062X\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><b>Abstract</b>—In this investigation, thin films of copper oxides obtained by arc deposition at low pressure on borosilicate glass are studied. The phase composition, structural characteristics, and chemical state of the samples are confirmed by X-ray diffraction and X-ray photoelectron spectroscopy. Hall measurements using the van der Pauw method show that films of both Cu<sub>2</sub>O and CuO phase compositions have hole conductivity (<i>p</i>-type). The concentration of charge carriers, mobility, and resistivity of the samples are determined. The formation of a heterojunction with a significant decrease in the concentration of charge carriers due to the recombination of electron–hole pairs is observed in a thin film of mixed composition (Cu<sub>2</sub>O/CuO). From UV-visible spectroscopy measurements, the absorption/transmission characteristics of the films are determined and the optical band gap is calculated. It is shown that change in the phase composition of the oxide from Cu<sub>2</sub>O to CuO leads to a decrease in the band gap from 1.90 to 1.34 eV.</p>\",\"PeriodicalId\":586,\"journal\":{\"name\":\"Inorganic Materials: Applied Research\",\"volume\":\"15 4\",\"pages\":\"1077 - 1083\"},\"PeriodicalIF\":0.5000,\"publicationDate\":\"2024-08-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Inorganic Materials: Applied Research\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://link.springer.com/article/10.1134/S207511332470062X\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Inorganic Materials: Applied Research","FirstCategoryId":"1085","ListUrlMain":"https://link.springer.com/article/10.1134/S207511332470062X","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
摘要
摘要 本文研究了在硼硅玻璃上通过低压电弧沉积获得的铜氧化物薄膜。通过 X 射线衍射和 X 射线光电子能谱确认了样品的相组成、结构特征和化学状态。利用范德坡法进行的霍尔测量表明，Cu2O 和 CuO 相组成的薄膜都具有空穴导电性（p 型）。还测定了样品的电荷载流子浓度、迁移率和电阻率。在混合成分（Cu2O/CuO）的薄膜中观察到异质结的形成，由于电子-电洞对的重组，电荷载流子的浓度显著下降。通过紫外-可见光谱测量，确定了薄膜的吸收/透射特性，并计算了光带隙。结果表明，氧化物相组成从 Cu2O 到 CuO 的变化导致带隙从 1.90 eV 下降到 1.34 eV。
Investigation of Electronic and Optical Properties of Thin Films of Copper Oxides Deposited by Low-Pressure Arc Discharge
Abstract—In this investigation, thin films of copper oxides obtained by arc deposition at low pressure on borosilicate glass are studied. The phase composition, structural characteristics, and chemical state of the samples are confirmed by X-ray diffraction and X-ray photoelectron spectroscopy. Hall measurements using the van der Pauw method show that films of both Cu2O and CuO phase compositions have hole conductivity (p-type). The concentration of charge carriers, mobility, and resistivity of the samples are determined. The formation of a heterojunction with a significant decrease in the concentration of charge carriers due to the recombination of electron–hole pairs is observed in a thin film of mixed composition (Cu2O/CuO). From UV-visible spectroscopy measurements, the absorption/transmission characteristics of the films are determined and the optical band gap is calculated. It is shown that change in the phase composition of the oxide from Cu2O to CuO leads to a decrease in the band gap from 1.90 to 1.34 eV.
期刊介绍：
Inorganic Materials: Applied Research contains translations of research articles devoted to applied aspects of inorganic materials. Best articles are selected from four Russian periodicals: Materialovedenie, Perspektivnye Materialy, Fizika i Khimiya Obrabotki Materialov, and Voprosy Materialovedeniya and translated into English. The journal reports recent achievements in materials science: physical and chemical bases of materials science; effects of synergism in composite materials; computer simulations; creation of new materials (including carbon-based materials and ceramics, semiconductors, superconductors, composite materials, polymers, materials for nuclear engineering, materials for aircraft and space engineering, materials for quantum electronics, materials for electronics and optoelectronics, materials for nuclear and thermonuclear power engineering, radiation-hardened materials, materials for use in medicine, etc.); analytical techniques; structure–property relationships; nanostructures and nanotechnologies; advanced technologies; use of hydrogen in structural materials; and economic and environmental issues. The journal also considers engineering issues of materials processing with plasma, high-gradient crystallization, laser technology, and ultrasonic technology. Currently the journal does not accept direct submissions, but submissions to one of the source journals is possible.
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