Al nanowire-embedded silicon for broadband optical modulation: Forming mechanism and optical performance

In recent decades, silicon has been widely used in light regulation devices, owing to its wideband high refractive index and low dispersion. To meet the increasing demands for various applications, optical modulation techniques appear of great potential to enhance the optical performance of Si-based devices. However, challenges still remain in achieving precise control over the band structure and resonance modes without introducing complex artificial structures. In this study, a composite film composed of silicon embedded with high fraction aluminum nanowires was developed by magnetron sputtering. It was revealed that the formation of aluminum nanowires was attributed to the spontaneous phase separation between silicon and aluminum, which was strongly dependent on the filling fraction and surface diffusion length of the aluminum during the co-sputtering process. The composite microstructure was precisely regulated by manipulating adatom diffusion and reevaporation through ion bombardment, thereby modifying its broadband optical properties. Moreover, exceptional electromagnetic properties were achieved by incorporating aluminum nanowires into silicon, as evidenced by the metallic behaviors in the short-wavelength regime and dielectric properties in the infrared spectrum range.