用于高性能自供电肖特基光电二极管的二维 InP 晶体的空间约束合成

IF 7.2 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
Lin-Qing Yue, Yan-Lei Shi, Sheng Qiang, Nie-Feng Sun, Jing-Kai Qin, Liang Zhen, Cheng-Yan Xu
{"title":"用于高性能自供电肖特基光电二极管的二维 InP 晶体的空间约束合成","authors":"Lin-Qing Yue, Yan-Lei Shi, Sheng Qiang, Nie-Feng Sun, Jing-Kai Qin, Liang Zhen, Cheng-Yan Xu","doi":"10.1016/j.apmt.2024.102376","DOIUrl":null,"url":null,"abstract":"Atomic-thin III-V semiconductors with nanometer thickness have emerge as promising candidate for diverse applications in optoelectronics. In this work, by using a space-confine approach, ultra-thin indium phosphide (InP) crystals were obtained with thickness scaled down 10 nm, which demonstrate an extremely giant second harmonic generation (SHG) susceptivity up to 2.05 × 10 m/V under 1064 nm excitation, among the best of reported two-dimensional semiconductors. In addition, a high-performance Schottky photodiode with asymmetric electrical contact was implemented. The self-powered device exhibits a high responsivity of 15.3 mA W and a detectivity of 1.94 × 10 Jones under 532 nm light illumination, revealing a high on/off ratio of photocurrent exceeding 10 under zero bias, accompanied by rapid response times of only milliseconds. The results offer a streamlined avenue to develop ultrathin III-V semiconductor for high-performance photodetectors in future applications.","PeriodicalId":8066,"journal":{"name":"Applied Materials Today","volume":"1 1","pages":""},"PeriodicalIF":7.2000,"publicationDate":"2024-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Space-confined synthesis of two-dimensional InP crystals for high-performance self-powered Schottky photodiode\",\"authors\":\"Lin-Qing Yue, Yan-Lei Shi, Sheng Qiang, Nie-Feng Sun, Jing-Kai Qin, Liang Zhen, Cheng-Yan Xu\",\"doi\":\"10.1016/j.apmt.2024.102376\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Atomic-thin III-V semiconductors with nanometer thickness have emerge as promising candidate for diverse applications in optoelectronics. In this work, by using a space-confine approach, ultra-thin indium phosphide (InP) crystals were obtained with thickness scaled down 10 nm, which demonstrate an extremely giant second harmonic generation (SHG) susceptivity up to 2.05 × 10 m/V under 1064 nm excitation, among the best of reported two-dimensional semiconductors. In addition, a high-performance Schottky photodiode with asymmetric electrical contact was implemented. The self-powered device exhibits a high responsivity of 15.3 mA W and a detectivity of 1.94 × 10 Jones under 532 nm light illumination, revealing a high on/off ratio of photocurrent exceeding 10 under zero bias, accompanied by rapid response times of only milliseconds. The results offer a streamlined avenue to develop ultrathin III-V semiconductor for high-performance photodetectors in future applications.\",\"PeriodicalId\":8066,\"journal\":{\"name\":\"Applied Materials Today\",\"volume\":\"1 1\",\"pages\":\"\"},\"PeriodicalIF\":7.2000,\"publicationDate\":\"2024-08-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Materials Today\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1016/j.apmt.2024.102376\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Materials Today","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1016/j.apmt.2024.102376","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

纳米厚度的超薄 III-V 族半导体已成为光电子学领域各种应用的理想候选材料。在这项工作中,通过使用空间致密方法,获得了厚度缩减至 10 纳米的超薄磷化铟(InP)晶体,在 1064 纳米激发下,其二次谐波发生(SHG)电感高达 2.05 × 10 m/V,在已报道的二维半导体中名列前茅。此外,还实现了具有非对称电接触的高性能肖特基光电二极管。该自供电器件在 532 纳米光照下的响应率高达 15.3 mA W,检测率为 1.94 × 10 Jones,在零偏压下的光电流开/关比超过 10,同时响应时间仅为几毫秒。这些研究成果为开发未来应用中的高性能光电探测器所需的超薄 III-V 半导体提供了一条捷径。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Space-confined synthesis of two-dimensional InP crystals for high-performance self-powered Schottky photodiode
Atomic-thin III-V semiconductors with nanometer thickness have emerge as promising candidate for diverse applications in optoelectronics. In this work, by using a space-confine approach, ultra-thin indium phosphide (InP) crystals were obtained with thickness scaled down 10 nm, which demonstrate an extremely giant second harmonic generation (SHG) susceptivity up to 2.05 × 10 m/V under 1064 nm excitation, among the best of reported two-dimensional semiconductors. In addition, a high-performance Schottky photodiode with asymmetric electrical contact was implemented. The self-powered device exhibits a high responsivity of 15.3 mA W and a detectivity of 1.94 × 10 Jones under 532 nm light illumination, revealing a high on/off ratio of photocurrent exceeding 10 under zero bias, accompanied by rapid response times of only milliseconds. The results offer a streamlined avenue to develop ultrathin III-V semiconductor for high-performance photodetectors in future applications.
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来源期刊
Applied Materials Today
Applied Materials Today Materials Science-General Materials Science
CiteScore
14.90
自引率
3.60%
发文量
393
审稿时长
26 days
期刊介绍: Journal Name: Applied Materials Today Focus: Multi-disciplinary, rapid-publication journal Focused on cutting-edge applications of novel materials Overview: New materials discoveries have led to exciting fundamental breakthroughs. Materials research is now moving towards the translation of these scientific properties and principles.
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