{"title":"使用聚（甲基丙烯酸甲酯）涂层 MoS2 光电晶体管进行热稳定光感应，提高成像可靠性","authors":"Jaewan Park, Sungmin Park, Seongin Hong","doi":"10.1088/1402-4896/ad6cc8","DOIUrl":null,"url":null,"abstract":"\n In this paper, we report thermally stable photosensing using MoS2 phototransistor with a poly(methyl methacrylate) (PMMA) coating. The increase in the OFF current of the PMMA-coated MoS2 phototransistor degraded to less than 87.72% of that of the pristine MoS2 phototransistor under harsh temperature conditions (250C). PMMA coating on the pristine MoS2 phototransistor improved the photosensitivity and drain current stability as a function of time by 315.71% at 250C and 91.26% under intense negative bias temperature illumination stress (NBTIS) test (Vgs = −30 V, Vds = 10 V, λex = 638 nm, Pinc = 1.0 mW, and T = 250C), respectively. This simple and useful method provides valuable insight for improving the reliability of photodetectors and image sensor systems under harsh temperature.","PeriodicalId":503429,"journal":{"name":"Physica Scripta","volume":"3 3","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Thermally stable photosensing using poly(methyl methacrylate)-coated MoS2 phototransistor for improved imaging reliability\",\"authors\":\"Jaewan Park, Sungmin Park, Seongin Hong\",\"doi\":\"10.1088/1402-4896/ad6cc8\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n In this paper, we report thermally stable photosensing using MoS2 phototransistor with a poly(methyl methacrylate) (PMMA) coating. The increase in the OFF current of the PMMA-coated MoS2 phototransistor degraded to less than 87.72% of that of the pristine MoS2 phototransistor under harsh temperature conditions (250C). PMMA coating on the pristine MoS2 phototransistor improved the photosensitivity and drain current stability as a function of time by 315.71% at 250C and 91.26% under intense negative bias temperature illumination stress (NBTIS) test (Vgs = −30 V, Vds = 10 V, λex = 638 nm, Pinc = 1.0 mW, and T = 250C), respectively. This simple and useful method provides valuable insight for improving the reliability of photodetectors and image sensor systems under harsh temperature.\",\"PeriodicalId\":503429,\"journal\":{\"name\":\"Physica Scripta\",\"volume\":\"3 3\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-08-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Physica Scripta\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1088/1402-4896/ad6cc8\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica Scripta","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/1402-4896/ad6cc8","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Thermally stable photosensing using poly(methyl methacrylate)-coated MoS2 phototransistor for improved imaging reliability
In this paper, we report thermally stable photosensing using MoS2 phototransistor with a poly(methyl methacrylate) (PMMA) coating. The increase in the OFF current of the PMMA-coated MoS2 phototransistor degraded to less than 87.72% of that of the pristine MoS2 phototransistor under harsh temperature conditions (250C). PMMA coating on the pristine MoS2 phototransistor improved the photosensitivity and drain current stability as a function of time by 315.71% at 250C and 91.26% under intense negative bias temperature illumination stress (NBTIS) test (Vgs = −30 V, Vds = 10 V, λex = 638 nm, Pinc = 1.0 mW, and T = 250C), respectively. This simple and useful method provides valuable insight for improving the reliability of photodetectors and image sensor systems under harsh temperature.
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