Viviane Yim, Anna Mukhtarov, Nathalie Drogue, Delphine Autillo, Thierry Lardin, Marc Zussy, Jérôme Dechamp, Delphine Truffier-Boutry
{"title":"对粗糙硅晶片进行金属污染分析的 TXRF 能力","authors":"Viviane Yim, Anna Mukhtarov, Nathalie Drogue, Delphine Autillo, Thierry Lardin, Marc Zussy, Jérôme Dechamp, Delphine Truffier-Boutry","doi":"10.1557/s43578-024-01401-w","DOIUrl":null,"url":null,"abstract":"<p>Total X-Ray Fluorescence (TXRF) is a non-destructive technique for the characterization of metallic contaminants on bare silicon wafers. TXRF is sensible to roughness leading to a diffraction phenomenon. In this study, the effects of roughness on TXRF analysis were evaluated with various rough silicon wafers produced by microelectronic processes of grinding, wet cleaning and chemical mechanical polishing. TXRF parameters rise as roughness increases, starting from 3 nm RMS (Root Mean Square) roughness. On spectra, characteristic Si (silicon wafer) and W (TXRF anode) peaks widen. Secondary peaks, sum/escape peaks appear, inducing interferences with Al, Cu, Zn and background noise increases as well. Through intentionally contaminated grinded wafers (RMS 12 nm) by spin-coating at selected concentrations, it was observed that most of the elements are quantified at 1 × 10<sup>12</sup> at/cm<sup>2</sup>. At concentrations of 1 × 10<sup>10</sup> at/cm<sup>2</sup> and 1 × 10<sup>11</sup> at/cm<sup>2</sup>, only few elements are quantified due to the elevated background noise and interferences.</p><h3 data-test=\"abstract-sub-heading\">Graphical abstract</h3>\n","PeriodicalId":16306,"journal":{"name":"Journal of Materials Research","volume":"2018 1","pages":""},"PeriodicalIF":2.7000,"publicationDate":"2024-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"TXRF capability of metallic contamination analysis on rough silicon wafers\",\"authors\":\"Viviane Yim, Anna Mukhtarov, Nathalie Drogue, Delphine Autillo, Thierry Lardin, Marc Zussy, Jérôme Dechamp, Delphine Truffier-Boutry\",\"doi\":\"10.1557/s43578-024-01401-w\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>Total X-Ray Fluorescence (TXRF) is a non-destructive technique for the characterization of metallic contaminants on bare silicon wafers. TXRF is sensible to roughness leading to a diffraction phenomenon. In this study, the effects of roughness on TXRF analysis were evaluated with various rough silicon wafers produced by microelectronic processes of grinding, wet cleaning and chemical mechanical polishing. TXRF parameters rise as roughness increases, starting from 3 nm RMS (Root Mean Square) roughness. On spectra, characteristic Si (silicon wafer) and W (TXRF anode) peaks widen. Secondary peaks, sum/escape peaks appear, inducing interferences with Al, Cu, Zn and background noise increases as well. Through intentionally contaminated grinded wafers (RMS 12 nm) by spin-coating at selected concentrations, it was observed that most of the elements are quantified at 1 × 10<sup>12</sup> at/cm<sup>2</sup>. At concentrations of 1 × 10<sup>10</sup> at/cm<sup>2</sup> and 1 × 10<sup>11</sup> at/cm<sup>2</sup>, only few elements are quantified due to the elevated background noise and interferences.</p><h3 data-test=\\\"abstract-sub-heading\\\">Graphical abstract</h3>\\n\",\"PeriodicalId\":16306,\"journal\":{\"name\":\"Journal of Materials Research\",\"volume\":\"2018 1\",\"pages\":\"\"},\"PeriodicalIF\":2.7000,\"publicationDate\":\"2024-08-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Research\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1557/s43578-024-01401-w\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Research","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1557/s43578-024-01401-w","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
TXRF capability of metallic contamination analysis on rough silicon wafers
Total X-Ray Fluorescence (TXRF) is a non-destructive technique for the characterization of metallic contaminants on bare silicon wafers. TXRF is sensible to roughness leading to a diffraction phenomenon. In this study, the effects of roughness on TXRF analysis were evaluated with various rough silicon wafers produced by microelectronic processes of grinding, wet cleaning and chemical mechanical polishing. TXRF parameters rise as roughness increases, starting from 3 nm RMS (Root Mean Square) roughness. On spectra, characteristic Si (silicon wafer) and W (TXRF anode) peaks widen. Secondary peaks, sum/escape peaks appear, inducing interferences with Al, Cu, Zn and background noise increases as well. Through intentionally contaminated grinded wafers (RMS 12 nm) by spin-coating at selected concentrations, it was observed that most of the elements are quantified at 1 × 1012 at/cm2. At concentrations of 1 × 1010 at/cm2 and 1 × 1011 at/cm2, only few elements are quantified due to the elevated background noise and interferences.
期刊介绍：
Journal of Materials Research (JMR) publishes the latest advances about the creation of new materials and materials with novel functionalities, fundamental understanding of processes that control the response of materials, and development of materials with significant performance improvements relative to state of the art materials. JMR welcomes papers that highlight novel processing techniques, the application and development of new analytical tools, and interpretation of fundamental materials science to achieve enhanced materials properties and uses. Materials research papers in the following topical areas are welcome.
• Novel materials discovery
• Electronic, photonic and magnetic materials
• Energy Conversion and storage materials
• New thermal and structural materials
• Soft materials
• Biomaterials and related topics
• Nanoscale science and technology
• Advances in materials characterization methods and techniques
• Computational materials science, modeling and theory
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