通过对块状缺陷层和不同电荷传输层进行梯度重排提高 FASnI3 包晶光伏电池的性能

IF 1.6 4区 物理与天体物理 Q2 PHYSICS, MULTIDISCIPLINARY
Ramadevi Janapaneni, Deboraj Muchahary
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引用次数: 0

摘要

这项研究对基于碘化甲脒锡 (FASnI3) 的过氧化物太阳能电池的性能进行了理论分析。与其他过氧化物相比,使用 FASnI3 的优势在于其低毒性和环保性。虽然 FASnI3 的热稳定性和湿稳定性略低于无机 CsSnI3,但它具有更好的特性可调性和更高的功率转换效率(CE)潜力。在 PVSC 中,不仅是表面缺陷,高浓度的 Sn4+ 也在 FASnI3 内部形成了巨大的体缺陷密度,从而限制了 CE。块状缺陷分为两类:(1)Sn4+ 导致的固定离子缺陷;(2)Sn 间隙和卤化物空位导致的移动离子缺陷。为了克服固定缺陷的影响,我们采用了一种技术,使吸收体内部由 Sn4+ 介导的块状缺陷呈梯度分布。PVSC:ITO/PEDOT:PSS/FASnI3/C60/Au 在 OghmaNano 中进行了模拟,分析了 FASnI3 内部缺陷的均匀分布与梯度分布。在缺陷梯度分布的情况下,CE 上升了 10% 到 13%,这归因于器件内部电场的增强。此外,本研究还全面分析并报告了移动离子对均匀和梯度 PVSC 性能的影响。分析表明,高达 1022 m-3 量级的离子密度对 PVSC 的性能没有显著影响。此外,考虑到电荷传输层的关键作用,七种不同的材料,如 MoO3、PEDOT:PSS、TCTA、V2O5、Li0.05Ni0.95O、SrCu2O2 和 CuI 等七种不同的材料被评估是否有资格作为 HTAL 用于拟议的 PVSC。其中,CuI 和 C60 作为 HTAL 和 ETAL,可获得最高的 CE、FF、JSC 和 VOC,分别为 20.64%、69.09%、1.14 V 和 26.16 mA cm-2。所报告的光伏器件具有高 CE 值,对环境友好,可能成为太阳能收集的潜在候选器件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Performance enhancement of FASnI3 perovskite photovoltaic cell through gradient re-arrangement of bulk defect and distinct charge transport layers

Performance enhancement of FASnI3 perovskite photovoltaic cell through gradient re-arrangement of bulk defect and distinct charge transport layers

This work deals with theoretical analysis of performance of a formamidinium tin iodide (FASnI3) based perovskite solar cell. The advantages of using FASnI3 over other perovskites include its low toxicity and environmental friendliness. While FASnI3 has slightly lower thermal and moisture stability compared to the inorganic CsSnI3, it offers better tunability of properties and higher power conversion efficiency (CE) potential. In PVSCs not only the surface defect but also the high concentration of Sn4+ creates huge bulk defect density inside the FASnI3 and limits the CE. The bulk defect is of two types (1) fixed ionic defects due to Sn4+ and (2) mobile ionic defects due to Sn interstitial and halide vacancy. With a goal to overcome the impact of fixed defect, we used a technique to gradient distribution of Sn4+ mediated bulk defects inside the absorber. The PVSC: ITO/PEDOT: PSS/FASnI3/C60/Au is simulated in OghmaNano where uniform distribution versus gradient distribution of defect inside FASnI3 are analyzed. The ~ 10 to 13% rise in CE is observed for the gradient distribution of defect and is attributed to the enhancement in electric field inside the device. Moreover, the impact of mobile ions on the performance of both uniform and gradient PVSCs is comprehensively analyzed and reported in this work. The analysis indicates that an ion density up to the order of 1022 m−3 has no significant impact on the performance of the PVSC. In addition, considering the pivotal role of charge transport layers, seven different materials such as MoO3, PEDOT: PSS, TCTA, V2O5, Li0.05Ni0.95O, SrCu2O2, and CuI are assessed for eligibility as HTAL in the proposed PVSC. Amongst those the CuI and C60 as HTAL and ETAL results in highest CE, FF, JSC and VOC of 20.64%, 69.09%, 1.14 V and 26.16 mA cm−2 respectively. The reported photovoltaic device with high CE is environment friendly and may be a potential candidate for solar energy harvesting.

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来源期刊
Indian Journal of Physics
Indian Journal of Physics 物理-物理:综合
CiteScore
3.40
自引率
10.00%
发文量
275
审稿时长
3-8 weeks
期刊介绍: Indian Journal of Physics is a monthly research journal in English published by the Indian Association for the Cultivation of Sciences in collaboration with the Indian Physical Society. The journal publishes refereed papers covering current research in Physics in the following category: Astrophysics, Atmospheric and Space physics; Atomic & Molecular Physics; Biophysics; Condensed Matter & Materials Physics; General & Interdisciplinary Physics; Nonlinear dynamics & Complex Systems; Nuclear Physics; Optics and Spectroscopy; Particle Physics; Plasma Physics; Relativity & Cosmology; Statistical Physics.
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