光激发对半导体高频产生的影响

Brian de Keijzer, Pieter J. van Essen, Peter M. Kraus
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引用次数: 0

摘要

固态高次谐波发生对带状结构、载流子群和载流子散射非常敏感。因此,固态高次谐波发生越来越多地被用作飞秒时间分辨泵浦探针实验的探针。迄今为止,大多数泵浦探针实验研究都报道了固态介质中光激发引起的高次谐波发生振幅抑制,但这一现象的起源仍然难以捉摸。通过基于半导体布洛赫方程的模拟,我们发现相干载流子群的消相是驱动这种抑制的主要机制。此外,我们还发现带隙重正化是高次谐波相移的一个来源。我们引入了一个基于半经典作用的分析模型,以支持我们的数值结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of photoexcitation on high-harmonic generation in semiconductors
Solid-state high-harmonic generation is intrinsically sensitive to band structure, carrier population, and carrier scattering. As such, solid-state high-harmonic generation is increasingly used as a probe for femtosecond time-resolved pump-probe experiments. So far, most experimental pump-probe studies have reported photoexcitation-induced amplitude suppression of high-harmonic generation in solid-state media, yet the origins of this phenomenon remain elusive. Through simulations based on the semiconductor Bloch equations, we identify the dephasing of the coherent carrier population as the primary mechanism driving this suppression. Furthermore, we find band gap renormalization to be a source for phase shifts of high harmonics. We introduce an analytical model, based on a semi-classical action, that supports our numerical outcomes.
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