使用 SIC MOSFET 的高功率密度降压升压型 DC/DC 转换器

Zuraiz Rana, Runquan Meng, Kashif Ali, Rashid Haseeb
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引用次数: 0

摘要

高功率密度是电力电子技术的一大进步。与标准硅器件相比,第三代宽带隙半导体器件(WBG SIC)的性能显著提高。SIC MOSFET 电阻低、热稳定性好、开关速度快,因此常用于转换器等电力电子设备中。提高开关频率可有效缩小电路尺寸。本文利用 SIC MOSFET 和 STM32 单芯片 MCU 设计了一种高功率密度、更高频率的降压升压转换器,并在 LTspice 中建立了仿真模型。为 SIC MOSFET 设计的驱动电路旨在最大限度地提高转换器的可靠性。同步整流可提高转换器的效率。与其他类型的转换器相比,转换器的体积减小,实现了 DC/DC 转换器轻量化和高功率密度的目标。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High Power Density Buck Boost DC/DC Converter Using SIC MOSFET
High power density is an advance in power electronics. Third generation wide-bandgap semiconductor devices (WBG SICs) offer significantly improved performance compared to standard silicon devices. SIC MOSFET is commonly used in power electronic equipment such as converters due to its low resistance, excellent thermal stability, and rapid switching speed. Increasing the switching frequency effectively reduces the circuit size. This article uses SIC MOSFET and STM32 single-chip MCU to design a high power density and higher frequency buck boost converter and establish a simulation model in LTspice. The driving circuit designed for SIC MOSFET is intended to maximize the converter’s reliability. Synchronous rectification applies to enhance the converter efficiency. Compared to other types of converters, the size of the converter is reduced, achieving the goals of lightweight and high power density of DC/DC converters.
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