Z. Ji, X. Ju, S. Lu, S. Liu, T. Sun, S. Zhang, Z. Sheng, F. Gan, Z. Liu, T. Wang
{"title":"用于未来 XFEL 高帧率和高动态 X 射线成像的 11 位 SAR ADC","authors":"Z. Ji, X. Ju, S. Lu, S. Liu, T. Sun, S. Zhang, Z. Sheng, F. Gan, Z. Liu, T. Wang","doi":"10.1088/1748-0221/19/07/p07029","DOIUrl":null,"url":null,"abstract":"\n The paper presents the design and test results of an 11-bit\n successive approximation register (SAR) ADC, suitable for massive\n on-chip integration in a pixel readout chip. The objective is to\n establish new digital readout architectures for X-ray pixel\n detectors at future X-ray free electron laser (XFEL) facilities,\n enabling high frame rates and a high dynamic range\n simultaneously. The prototype chip has been designed and fabricated\n in a 130 nm CMOS process, with the core circuit occupying an area\n of ~ 0.034 mm2. The measured differential nonlinearity (DNL)\n and integral nonlinearity (INL) are +0.78/-0.78 LSB and\n +0.58/-0.52 LSB, respectively. The signal-to-noise-and-distortion\n ratio (SINAD) is 61.6 dB at 2 MS/s, achieving an effective number\n of bit (ENOB) of ~ 9.94-bit. The core circuit power consumption\n is 47 μW at 2 MS/s with a 1.2 V supply.","PeriodicalId":507814,"journal":{"name":"Journal of Instrumentation","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An 11-bit SAR ADC for high frame rate and high-dynamic X-ray imaging at future XFELs\",\"authors\":\"Z. Ji, X. Ju, S. Lu, S. Liu, T. Sun, S. Zhang, Z. Sheng, F. Gan, Z. Liu, T. Wang\",\"doi\":\"10.1088/1748-0221/19/07/p07029\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n The paper presents the design and test results of an 11-bit\\n successive approximation register (SAR) ADC, suitable for massive\\n on-chip integration in a pixel readout chip. The objective is to\\n establish new digital readout architectures for X-ray pixel\\n detectors at future X-ray free electron laser (XFEL) facilities,\\n enabling high frame rates and a high dynamic range\\n simultaneously. The prototype chip has been designed and fabricated\\n in a 130 nm CMOS process, with the core circuit occupying an area\\n of ~ 0.034 mm2. The measured differential nonlinearity (DNL)\\n and integral nonlinearity (INL) are +0.78/-0.78 LSB and\\n +0.58/-0.52 LSB, respectively. The signal-to-noise-and-distortion\\n ratio (SINAD) is 61.6 dB at 2 MS/s, achieving an effective number\\n of bit (ENOB) of ~ 9.94-bit. The core circuit power consumption\\n is 47 μW at 2 MS/s with a 1.2 V supply.\",\"PeriodicalId\":507814,\"journal\":{\"name\":\"Journal of Instrumentation\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Instrumentation\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1088/1748-0221/19/07/p07029\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Instrumentation","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/1748-0221/19/07/p07029","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An 11-bit SAR ADC for high frame rate and high-dynamic X-ray imaging at future XFELs
The paper presents the design and test results of an 11-bit
successive approximation register (SAR) ADC, suitable for massive
on-chip integration in a pixel readout chip. The objective is to
establish new digital readout architectures for X-ray pixel
detectors at future X-ray free electron laser (XFEL) facilities,
enabling high frame rates and a high dynamic range
simultaneously. The prototype chip has been designed and fabricated
in a 130 nm CMOS process, with the core circuit occupying an area
of ~ 0.034 mm2. The measured differential nonlinearity (DNL)
and integral nonlinearity (INL) are +0.78/-0.78 LSB and
+0.58/-0.52 LSB, respectively. The signal-to-noise-and-distortion
ratio (SINAD) is 61.6 dB at 2 MS/s, achieving an effective number
of bit (ENOB) of ~ 9.94-bit. The core circuit power consumption
is 47 μW at 2 MS/s with a 1.2 V supply.