针对大功率和高温应用优化铂/氮化铝肖特基势垒二极管的 TCAD 模型和温度相关分析

Q4 Engineering
Md. Maruf Hossain, Showmik Singha, Twisha Titirsha, Sazia A. Eliza, Syed Kamrul Islam
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引用次数: 0

摘要

本研究利用技术计算机辅助设计(TCAD)建模对铂/氮化铝肖特基势垒二极管(SBD)进行了全面的调查和优化。该研究探讨了带有各种金属触点(包括铝(Al)、银(Ag)、钨(W)、金(Au)、镍(Ni)和铂(Pt))的 AlN SBD 的电气特性。通过对不同金属/氮化铝肖特基触点的比较分析,铂/氮化铝结构因其优异的势垒高度和较低的漏电流而成为最有前途的结构。在[式中:见正文]K 时,二极管的势垒高度为 2.72[式中:见正文]V,漏电流为 0.046[式中:见正文]pA,击穿电压为 363[式中:见正文]V,接近理想值。研究还扩展到了铂/氮化铝肖特基二极管随温度变化的电气行为,特别是在大功率和高温应用方面。在[式中:见正文]K 至[式中:见正文]K 的温度范围内进行的分析表明,随着温度的升高,导通电阻呈上升趋势,漏电流则持续降低。重要的是,研究表明,温度对二极管势垒高度和击穿电压的影响可以忽略不计,从而使其适用于高温操作。利用氮化铝作为 III-V 族化合物半导体家族中一种超宽带隙材料的独特特性,这项研究为铂/氮化铝肖特基接触的潜在应用提供了宝贵的见解。研究强调,铂/氮化铝肖特基触点不仅适用于高功率、高温 SBD,还可作为场效应晶体管 (FET) 的优质金属/半导体栅极触点。它们之所以适用,是因为它们能够承受高电压,最大限度地减少反向漏电流,并具有更好的热稳定性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Optimizing TCAD Model and Temperature-Dependent Analysis of Pt/AlN Schottky Barrier Diodes for High-Power and High-Temperature Applications
This research presents a comprehensive investigation and optimization of the Pt/AlN Schottky Barrier diode (SBD) using technology computer-aided design (TCAD) modeling. The study explores the electrical characteristics of AlN SBDs with various metal contacts, including Aluminum (Al), Silver (Ag), Tungsten (W), Gold (Au), Nickel (Ni), and Platinum (Pt). Through the comparative analyses of different metal/AlN Schottky contacts, the Pt/AlN structure emerges as the most promising due to its superior barrier height and lower leakage current. At [Formula: see text]K, the diode demonstrates a barrier height of 2.72[Formula: see text]V, a nearly ideal leakage current of 0.046[Formula: see text]pA, and a breakdown voltage of 363[Formula: see text]V. The research extends to examining the temperature-dependent electrical behavior of Pt/AlN Schottky diodes, particularly for high-power and high-temperature applications. Analysis carried out across temperatures ranging from [Formula: see text]K to [Formula: see text]K reveals a trend of increasing ON resistance and consistently lower leakage current with rising temperature. Importantly, the study indicates that the impact of temperature on the barrier height and breakdown voltage of the diode is negligible, thus rendering it suitable for high-temperature operation. Leveraging the unique properties of AlN as an ultra-wide bandgap material within the III-V compound semiconductor family, this research provides valuable insights into the potential applications of Pt/AlN Schottky contact. The study highlights that the Pt/AlN Schottky contact is effective not only for high-power, high-temperature SBDs but also as superior metal/semiconductor gate contacts for field-effect transistors (FETs). Their suitability is attributed to their ability to handle high voltages, minimize reverse leakage current, and demonstrate improved thermal stability.
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来源期刊
International Journal of High Speed Electronics and Systems
International Journal of High Speed Electronics and Systems Engineering-Electrical and Electronic Engineering
CiteScore
0.60
自引率
0.00%
发文量
22
期刊介绍: Launched in 1990, the International Journal of High Speed Electronics and Systems (IJHSES) has served graduate students and those in R&D, managerial and marketing positions by giving state-of-the-art data, and the latest research trends. Its main charter is to promote engineering education by advancing interdisciplinary science between electronics and systems and to explore high speed technology in photonics and electronics. IJHSES, a quarterly journal, continues to feature a broad coverage of topics relating to high speed or high performance devices, circuits and systems.
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