{"title":"三层（La2/3Sr1/3MnO3/γ-Fe2O3/La2/3Sr1/3MnO3）异质结构中的等温磁化和磁阻变化","authors":"Pooja Narwat, Ashutosh Mishra","doi":"10.1088/1402-4896/ad6647","DOIUrl":null,"url":null,"abstract":"\n We report the field dependent magnetic and magnetoresistance (MR) properties of La2/3Sr1/3MnO3 (LSMO)/γ-Fe2O3/LSMO trilayer heterostructures and single layer LSMO film grown on SiO2/Si (100) substrates utilizing Pulsed Laser Deposition technique. The metal- insulator-metal configuration is a magnetic tunnel junction topology, which is a parallel network of two metallic layers (LSMO) and one insulating layer (γ-Fe2O3) in current-in-plane (CIP) geometry. The intrinsically inhomogeneous polycrystalline trilayer film shows much lower (almost half) coercivity, compared to single layer LSMO film. The MR-H [MR = (ρ (H)-ρ (0))/ρ (0)] behavior of the films is studied under two regimes namely, Low Field Magnetoresistance (LFMR) and High Field Magnetoresistance (HFMR) at 5 K and 300 K in the field range of 0-7 T. Several equations were developed to simulate the experimental MR-H data of the studied samples. For both the films, in the LFMR region (0 T <H ≤ 1 T @ 5 K), the variation in MR exhibits a linear increase with H, followed by a logarithmic behavior in the HFMR region (1 T < H ≤ 7 T @5 K). For the trilayer film in CIP geometry, a negative MR of 16% is achieved at 5 K and 1 T field conditions, while LSMO single layer shows a negative MR of 13% at same temperature and field conditions. The MR obtained at high field (7 T) for both the films is quantitatively equal with a value of 38% @5 K and 15% @300 K. We obtained significantly better MR-H results for the trilayer in current-perpendicular-to-plane (CPP) configuration, where the two metallic layers and an insulating layer are in series. In the CPP configuration, MR is 21% @5 K and 1 T field, while it reached to 44% at 5 K and 7 T field. At room temperature, the trilayer heterostructure shows MR of 17% at 7 T field condition. At a higher field of 9 T, trilayer film in CPP mode exhibits MR value of 48% @5 K and 23%@300 K. Further, the anti-parallel and parallel magnetization states of the MIM device are well manifested in CIP and CPP geometries.\r","PeriodicalId":503429,"journal":{"name":"Physica Scripta","volume":"16 6","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Isothermal magnetization and magnetoresistive variations in trilayer (La2/3Sr1/3MnO3/γ-Fe2O3/La2/3Sr1/3MnO3) hetero-structure\",\"authors\":\"Pooja Narwat, Ashutosh Mishra\",\"doi\":\"10.1088/1402-4896/ad6647\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n We report the field dependent magnetic and magnetoresistance (MR) properties of La2/3Sr1/3MnO3 (LSMO)/γ-Fe2O3/LSMO trilayer heterostructures and single layer LSMO film grown on SiO2/Si (100) substrates utilizing Pulsed Laser Deposition technique. The metal- insulator-metal configuration is a magnetic tunnel junction topology, which is a parallel network of two metallic layers (LSMO) and one insulating layer (γ-Fe2O3) in current-in-plane (CIP) geometry. The intrinsically inhomogeneous polycrystalline trilayer film shows much lower (almost half) coercivity, compared to single layer LSMO film. The MR-H [MR = (ρ (H)-ρ (0))/ρ (0)] behavior of the films is studied under two regimes namely, Low Field Magnetoresistance (LFMR) and High Field Magnetoresistance (HFMR) at 5 K and 300 K in the field range of 0-7 T. Several equations were developed to simulate the experimental MR-H data of the studied samples. For both the films, in the LFMR region (0 T <H ≤ 1 T @ 5 K), the variation in MR exhibits a linear increase with H, followed by a logarithmic behavior in the HFMR region (1 T < H ≤ 7 T @5 K). For the trilayer film in CIP geometry, a negative MR of 16% is achieved at 5 K and 1 T field conditions, while LSMO single layer shows a negative MR of 13% at same temperature and field conditions. The MR obtained at high field (7 T) for both the films is quantitatively equal with a value of 38% @5 K and 15% @300 K. We obtained significantly better MR-H results for the trilayer in current-perpendicular-to-plane (CPP) configuration, where the two metallic layers and an insulating layer are in series. In the CPP configuration, MR is 21% @5 K and 1 T field, while it reached to 44% at 5 K and 7 T field. At room temperature, the trilayer heterostructure shows MR of 17% at 7 T field condition. At a higher field of 9 T, trilayer film in CPP mode exhibits MR value of 48% @5 K and 23%@300 K. Further, the anti-parallel and parallel magnetization states of the MIM device are well manifested in CIP and CPP geometries.\\r\",\"PeriodicalId\":503429,\"journal\":{\"name\":\"Physica Scripta\",\"volume\":\"16 6\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-07-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Physica Scripta\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1088/1402-4896/ad6647\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica Scripta","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/1402-4896/ad6647","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
我们报告了利用脉冲激光沉积技术在二氧化硅/硅（100）基底上生长的 La2/3Sr1/3MnO3 (LSMO)/γ-Fe2O3/LSMO 三层异质结构和单层 LSMO 薄膜的磁场依赖性和磁阻（MR）特性。金属-绝缘体-金属构型是一种磁隧道结拓扑结构，是由两个金属层（LSMO）和一个绝缘层（γ-Fe2O3）组成的平行网络，其几何形状为 "面内电流"（CIP）。与单层 LSMO 薄膜相比，本质上不均匀的多晶三层薄膜显示出更低的（几乎一半的）矫顽力。在 5 K 和 300 K、0-7 T 的磁场范围内，研究了薄膜在低磁场磁阻 (LFMR) 和高磁场磁阻 (HFMR) 两种状态下的 MR-H [MR = (ρ (H)-ρ (0))/ρ (0)]行为。对于这两种薄膜，在 LFMR 区域（0 T < H ≤ 1 T @ 5 K），MR 随 H 的变化呈线性增加，随后在 HFMR 区域（1 T < H ≤ 7 T @ 5 K）呈对数变化。对于 CIP 几何形状的三层薄膜，在 5 K 和 1 T 磁场条件下，磁共振为负 16%，而 LSMO 单层在相同温度和磁场条件下，磁共振为负 13%。两层薄膜在高磁场（7 T）条件下的磁共振值相等，5 K 时为 38%，300 K 时为 15%。我们在电流垂直平面（CPP）配置下的三层薄膜获得了明显更好的磁共振-H 结果，其中两层金属层和一层绝缘层是串联的。在 CPP 配置中，5 K 和 1 T 磁场时的磁共振为 21%，而在 5 K 和 7 T 磁场时达到 44%。室温下，三层异质结构在 7 T 磁场条件下的磁共振为 17%。此外，MIM 器件的反平行和平行磁化状态在 CIP 和 CPP 几何结构中都得到了很好的体现。
Isothermal magnetization and magnetoresistive variations in trilayer (La2/3Sr1/3MnO3/γ-Fe2O3/La2/3Sr1/3MnO3) hetero-structure
We report the field dependent magnetic and magnetoresistance (MR) properties of La2/3Sr1/3MnO3 (LSMO)/γ-Fe2O3/LSMO trilayer heterostructures and single layer LSMO film grown on SiO2/Si (100) substrates utilizing Pulsed Laser Deposition technique. The metal- insulator-metal configuration is a magnetic tunnel junction topology, which is a parallel network of two metallic layers (LSMO) and one insulating layer (γ-Fe2O3) in current-in-plane (CIP) geometry. The intrinsically inhomogeneous polycrystalline trilayer film shows much lower (almost half) coercivity, compared to single layer LSMO film. The MR-H [MR = (ρ (H)-ρ (0))/ρ (0)] behavior of the films is studied under two regimes namely, Low Field Magnetoresistance (LFMR) and High Field Magnetoresistance (HFMR) at 5 K and 300 K in the field range of 0-7 T. Several equations were developed to simulate the experimental MR-H data of the studied samples. For both the films, in the LFMR region (0 T
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