AlGaN/GaN HEMT 的 2-DEG 密度电流-电压特性分析模型

Pub Date : 2024-07-25 DOI:10.4028/p-s9f14c
Chaimae El Yazami, S. Bri
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摘要

被称为高电子迁移率晶体管(HEMT)的高频异质结晶体管被广泛应用于射频、辐射、太空探索等大功率领域。在宽带隙和低带隙材料的交界处受压时,AlGaN/GaN HEMT 会产生二维电子气(2DEG)。要确定量子阱中电子的最终数量,就必须评估二维电子气区域中存在的极化所产生的电荷密度。在本文中,二维电子气体(2-DEG)片载流子浓度估算模型考虑到了在很大程度上占主导地位的总极化。为了调节这些特性对器件性能的影响,我们重点讨论了电流-电压特性,该特性说明了漏极-源极电流是如何随栅电压调制而变化的。我们的研究还着眼于二维电子气体密度如何取决于铝摩尔百分比和氮化铝镓层厚度。
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An Analytic Model for the 2-DEG Density Current-Voltage Characteristic for AlGaN/GaN HEMTs
Higher frequency hetero-junction transistors called High Electron Mobility Transistors (HEMTs) are employed in a number of high-power applications, including radiofrequency, radiation, space exploration, and others. When stressed between the junction of a broad bandgap and low bandgap material, AlGaN/GaN HEMTs create Two-Dimensional Electron Gas (2DEG).To determine the eventual number of electrons in the quantum well, it is necessary to assess the charge density generated by the polarization existing in the 2DEG region. In this paper, two-dimensional electron gas (2-DEG) sheet carrier concentration estimate model takes into consideration the substantially dominating total polarization. In order to regulate the impact of these characteristics on the device performance, discussion has focused on the current-voltage characteristic, which illustrates how the drain-source current varies in response to the gate voltage modulation. Our study also aims at how the two-dimensional electron gas density depends on the aluminum molar percentage and AlGaN layer thickness.
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