Gayanath W. Fernando, Donal Sheets, Jason Hancock, Arthur Ernst, R. Matthias Geilhufe
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A Brief Review of Electronic and Magnetic Structure of TIF3
Materials with perovskite structure are known to exhibit fascinating physical properties such as high-temperature superconductivity, negative thermal expansion (NTE) and colossal magnetoresistance. However, transition metal trifluoride perovskites are less well studied compared to their oxide counterparts though they display marked differences such as NTE behavior in ScF3. Doping of such MF3 perovskites has been the focus of the experimental work of Morelock et al. [1] which provides a comprehensive structural study of the material class Sc1[Formula: see text]Ti[Formula: see text]F3. As shown in Fig. 1, there is a structural phase transition assumed to be tied to tilting of corner sharing octahedrons in this class of crystal structures which is believed to have an electrostatic dipolar origin, seen for example even in AlF3 [2]. However, the insulating and magnetic properties of TiF3 are closely related to the transition metal 3d-electrons. The extra valence [Formula: see text]-electron that Ti carries compared to Sc [1, 3] gives rise to unusual electronic and magnetic properties.
期刊介绍:
Launched in 1990, the International Journal of High Speed Electronics and Systems (IJHSES) has served graduate students and those in R&D, managerial and marketing positions by giving state-of-the-art data, and the latest research trends. Its main charter is to promote engineering education by advancing interdisciplinary science between electronics and systems and to explore high speed technology in photonics and electronics. IJHSES, a quarterly journal, continues to feature a broad coverage of topics relating to high speed or high performance devices, circuits and systems.