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设计适合几何编程的紧凑型 MOSFET 模型

IF 1.1 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
International Journal of Electronics Pub Date : 2024-07-25 DOI:10.1080/00207217.2024.2382492
Fabian L. Cabrera, Tiago O. Weber
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引用次数: 0

摘要

模拟集成电路的设计是一项要求很高的任务，涉及许多限制条件和目标。此外，所采用的晶体管模型必须考虑高阶物理效应，以实现...
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Design of a compact MOSFET model suitable for geometric programming
The design of analog integrated circuits is a demanding task that involves many constraints and objectives. Also, the transistor models employed must consider high-order physics effects to achieve ...
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来源期刊
International Journal of Electronics
International Journal of Electronics 工程技术-工程：电子与电气
CiteScore
3.30
自引率
15.40%
发文量
110
审稿时长
8 months
期刊介绍： The International Journal of Electronics (IJE) supports technical applications and developing research at the cutting edge of electronics. Encompassing a broad range of electronic topics, we are a leading electronics journal dedicated to quickly sharing new concepts and developments the field of electronics.
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