六氟锰铁合金 A2MnF6(A = Cs、Rb、K)立方双包晶的结构、弹性、电子、光学、磁学和热电特性研究

K. Bouferrache, M.A. Ghebouli, B. Ghebouli, M. Fatmi, H. Bouandas, T. Chihi, Nouf H. Alotaibi, Saikh Mohammad, M. Habila, M. Sillanpää
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引用次数: 0

摘要

我们详细分析了立方空间群双包晶石的结构、电子、光学、磁学和热电特性。计算方法是 WIEN2k 代码中实现的增强平面波函数加局部轨道,以及 GGA 和最精确的 GGA-mBJ 作为交换势。与现有的实验数据相比,我们的Ⅴ和晶格常数的精度在 1.2 % 到 3.6 % 之间。计算得出的Ⅳ和Ⅴ材料的带隙使它们在发光二极管技术中的应用更具优势。这些材料具有铁磁性。负形成能、自由赫尔姆霍兹能和声子的分散性证实了它们的热、热力学和动态稳定性。计算得出的、和材料的带隙使它们在发光二极管技术中的应用更具优势。p 型电荷载流子、直接带隙、平坦的导带和价带使它们成为良好的热电材料。对磁化的主要贡献来自未填充的 Mn-3d 轨道。高静态介电常数降低了电荷载流子的重组率,紫外区吸收峰的存在有利于在光电领域的应用。平坦的价带和导带、高 p 型电导率、良好的热电参数以及无毒性使这些化合物在热电应用中具有极大的吸引力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Study of structural, elastic, electronic, optical, magnetic and thermoelectric characteristics of Hexafluoromanganets A2MnF6 (A = Cs, Rb, K) cubic double perovskites
We analyse a detailed investigation of structure, electronic, optical, magnetic and thermoelectric properties of double perovskites with cubic space group. The calculation method was the augmented plane-wave functions plus local orbitals as implemented in the WIEN2k code and the GGA followed by the most accurate GGA-mBJ as exchange potentials. The precision of our , and lattice constant compared with their available experimental data is in the range 1.2 % to 3.6 %. The calculated band gap of , and materials advantages them for use in light-emitting diode technology. These materials exhibit ferromagnetic behavior. The negative formation energy, free Helmholtz energy and the dispersion of phonons confirm their thermal, thermodynamic and dynamic stability. The calculated band gap of , and materials advantages them for use in light-emitting diode technology. The p-type charge carriers, direct band gap, and flat conduction and valence bands make them as good thermoelectric materials. The major contribution to the magnetization comes from the unfilled Mn-3d orbital. The high static dielectric constant reduces the recombination rate of charge carriers and the presence of absorption peaks in the ultraviolet region are advantageous in the exploitation in the optoelectronic field. The flat valence and conduction bands, high p-type conductivity, good thermoelectric parameters, as well as non-toxicity make these compounds mainly attractive in the thermoelectric application.
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