在对垂直磁场干扰有很强免疫力的合成反铁磁体中实现逻辑功能和记忆行为

IF 2.5 4区 物理与天体物理 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
Bo Zhang, Yu Zhang, Keliu Luo, Yonghai Guo, Ze Yan, Wenbo Lv, Bo Wang, Zhide Li, Ziyang Hu, Qi Wang, Jiangwei Cao
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引用次数: 0

摘要

具有重金属/铁磁体结构的自旋电子器件已显示出内存计算的潜在应用。然而,铁磁体对外部磁场的敏感性给这些器件的实际应用带来了挑战。合成反铁磁体(SAF)具有良好的磁场抗扰性,可以有效解决这一问题。这项工作展示了通过使用电流脉冲控制 SAF 层的磁化状态来实现全部 16 种布尔逻辑功能,以及在垂直磁场干扰下在这些器件中实现稳定的多态存储。在电流脉冲的刺激下,SAF 器件还表现出突触可塑性。基于 SAF 器件构建的人工神经网络可以完成手写数字识别任务,准确率高达 90%。这些结果表明,SAF 器件具有很强的抗磁场干扰能力,因此在构建内存逻辑架构方面具有可行性和优越性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Implementation of Logic Function and Memristive Behavior in Synthetic Antiferromagnet with Strong Immunity to Perpendicular Magnetic Field Interference
Spintronic devices with heavy metal/ferromagnet structures have shown potential applications for in‐memory computing. However, the sensitivity of ferromagnet to external magnetic field raises a challenge for the practical applications of these devices. The usage of synthetic antiferromagnet (SAF) can effectively address this issue due to its good magnetic field immunity. This work demonstrates the implementation of all 16 types of Boolean logic functions via controlling the magnetization states of the SAF layer by using current pulses, and also the stable multistate storage under the interference of perpendicular magnetic field in these devices. The SAF devices also exhibit synaptic plasticity under the stimulation of current pulses. The artificial neural network constructed based on the SAF device can perform handwritten digit recognition tasks with an accuracy rate of 90%. These results showcase the viability and superiority of the SAF device in building logic‐in‐memory architecture for its strong immunity to magnetic field interference.
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来源期刊
Physica Status Solidi-Rapid Research Letters
Physica Status Solidi-Rapid Research Letters 物理-材料科学:综合
CiteScore
5.20
自引率
3.60%
发文量
208
审稿时长
1.4 months
期刊介绍: Physica status solidi (RRL) - Rapid Research Letters was designed to offer extremely fast publication times and is currently one of the fastest double peer-reviewed publication media in solid state and materials physics. Average times are 11 days from submission to first editorial decision, and 12 days from acceptance to online publication. It communicates important findings with a high degree of novelty and need for express publication, as well as other results of immediate interest to the solid-state physics and materials science community. Published Letters require approval by at least two independent reviewers. The journal covers topics such as preparation, structure and simulation of advanced materials, theoretical and experimental investigations of the atomistic and electronic structure, optical, magnetic, superconducting, ferroelectric and other properties of solids, nanostructures and low-dimensional systems as well as device applications. Rapid Research Letters particularly invites papers from interdisciplinary and emerging new areas of research.
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