用于光子科学应用的低增益雪崩二极管

IF 1.9 3区 物理与天体物理 Q2 PHYSICS, MULTIDISCIPLINARY
Matteo Centis Vignali, Giovanni Paternoster
{"title":"用于光子科学应用的低增益雪崩二极管","authors":"Matteo Centis Vignali, Giovanni Paternoster","doi":"10.3389/fphy.2024.1359179","DOIUrl":null,"url":null,"abstract":"Low Gain Avalanche Diodes (LGADs) are silicon sensors designed to achieve an internal gain in the order of 10 through the impact ionization process. The development of LGADs was pushed forward by their application in High Energy Physics (HEP) experiments, where they will be employed to provide measurements of the time of arrival of minimum ionizing particles with a resolution of around 30 ps. The initial technological implementation of the sensors constrains their minimum channel size to be larger than 1 mm<jats:sup>2</jats:sup>, in order to reduce inefficiencies due to the segmentation of the gain structure. The gain of the sensors is kept in the order of 10 to limit the sensor shot noise and their power consumption. In photon science, the gain provided by the sensor can boost the signal-to-noise ratio of the detector system, effectively reducing the x-ray energy threshold of photon counting detectors and the minimum x-ray energy where single photon resolution is achieved in charge integrating detectors. This can improve the hybrid pixel and strip detectors for soft and tender x-rays by simply changing the sensor element of the detector system. Photon science applications in the soft and tender energy range require improvements over the LGADs developed for HEP, in particular the presence of a thin entrance window to provide a satisfactory quantum efficiency and channel size with a pitch of less than 100 <jats:italic>μ</jats:italic>m. In this review, the fundamental aspects of the LGAD technology are presented, discussing also the ongoing and future developments that are of interest for photon science applications.","PeriodicalId":12507,"journal":{"name":"Frontiers in Physics","volume":"329 1","pages":""},"PeriodicalIF":1.9000,"publicationDate":"2024-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Low gain avalanche diodes for photon science applications\",\"authors\":\"Matteo Centis Vignali, Giovanni Paternoster\",\"doi\":\"10.3389/fphy.2024.1359179\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Low Gain Avalanche Diodes (LGADs) are silicon sensors designed to achieve an internal gain in the order of 10 through the impact ionization process. The development of LGADs was pushed forward by their application in High Energy Physics (HEP) experiments, where they will be employed to provide measurements of the time of arrival of minimum ionizing particles with a resolution of around 30 ps. The initial technological implementation of the sensors constrains their minimum channel size to be larger than 1 mm<jats:sup>2</jats:sup>, in order to reduce inefficiencies due to the segmentation of the gain structure. The gain of the sensors is kept in the order of 10 to limit the sensor shot noise and their power consumption. In photon science, the gain provided by the sensor can boost the signal-to-noise ratio of the detector system, effectively reducing the x-ray energy threshold of photon counting detectors and the minimum x-ray energy where single photon resolution is achieved in charge integrating detectors. This can improve the hybrid pixel and strip detectors for soft and tender x-rays by simply changing the sensor element of the detector system. Photon science applications in the soft and tender energy range require improvements over the LGADs developed for HEP, in particular the presence of a thin entrance window to provide a satisfactory quantum efficiency and channel size with a pitch of less than 100 <jats:italic>μ</jats:italic>m. In this review, the fundamental aspects of the LGAD technology are presented, discussing also the ongoing and future developments that are of interest for photon science applications.\",\"PeriodicalId\":12507,\"journal\":{\"name\":\"Frontiers in Physics\",\"volume\":\"329 1\",\"pages\":\"\"},\"PeriodicalIF\":1.9000,\"publicationDate\":\"2024-07-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Frontiers in Physics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.3389/fphy.2024.1359179\",\"RegionNum\":3,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Frontiers in Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.3389/fphy.2024.1359179","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

低增益雪崩二极管(LGAD)是一种硅传感器,其设计目的是通过撞击电离过程实现 10 量级的内部增益。低增益雪崩二极管在高能物理(HEP)实验中的应用推动了低增益雪崩二极管的发展,在高能物理实验中,低增益雪崩二极管将用于测量最小电离粒子的到达时间,分辨率约为 30 ps。传感器最初的技术实施限制其最小通道尺寸大于 1 平方毫米,以减少增益结构分段造成的低效。传感器的增益保持在 10 的数量级,以限制传感器的射击噪声和功耗。在光子科学中,传感器提供的增益可以提高探测器系统的信噪比,有效降低光子计数探测器的 X 射线能量阈值和电荷积分探测器实现单光子分辨率的最小 X 射线能量。这样,只需改变探测器系统的传感器元件,就能改进用于软X射线和嫩X射线的混合像素和条带探测器。软X射线和嫩X射线能量范围内的光子科学应用需要改进为高能量X射线开发的 LGAD,特别是需要薄入口窗口,以提供令人满意的量子效率和间距小于 100 微米的通道尺寸。本综述介绍了 LGAD 技术的基本方面,并讨论了光子科学应用方面正在进行的和未来的发展。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Low gain avalanche diodes for photon science applications
Low Gain Avalanche Diodes (LGADs) are silicon sensors designed to achieve an internal gain in the order of 10 through the impact ionization process. The development of LGADs was pushed forward by their application in High Energy Physics (HEP) experiments, where they will be employed to provide measurements of the time of arrival of minimum ionizing particles with a resolution of around 30 ps. The initial technological implementation of the sensors constrains their minimum channel size to be larger than 1 mm2, in order to reduce inefficiencies due to the segmentation of the gain structure. The gain of the sensors is kept in the order of 10 to limit the sensor shot noise and their power consumption. In photon science, the gain provided by the sensor can boost the signal-to-noise ratio of the detector system, effectively reducing the x-ray energy threshold of photon counting detectors and the minimum x-ray energy where single photon resolution is achieved in charge integrating detectors. This can improve the hybrid pixel and strip detectors for soft and tender x-rays by simply changing the sensor element of the detector system. Photon science applications in the soft and tender energy range require improvements over the LGADs developed for HEP, in particular the presence of a thin entrance window to provide a satisfactory quantum efficiency and channel size with a pitch of less than 100 μm. In this review, the fundamental aspects of the LGAD technology are presented, discussing also the ongoing and future developments that are of interest for photon science applications.
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来源期刊
Frontiers in Physics
Frontiers in Physics Mathematics-Mathematical Physics
CiteScore
4.50
自引率
6.50%
发文量
1215
审稿时长
12 weeks
期刊介绍: Frontiers in Physics publishes rigorously peer-reviewed research across the entire field, from experimental, to computational and theoretical physics. This multidisciplinary open-access journal is at the forefront of disseminating and communicating scientific knowledge and impactful discoveries to researchers, academics, engineers and the public worldwide.
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