通过等离子体增强化学气相沉积在硅上生长的硒化镓薄膜

IF 0.9 4区化学 Q4 CHEMISTRY, PHYSICAL

High Energy Chemistry Pub Date : 2024-07-23 DOI:10.1134/s0018143924700309

M. A. Kudryashov, L. A. Mochalov, Yu. P. Kudryashova, E. A. Slapovskaya

{"title":"通过等离子体增强化学气相沉积在硅上生长的硒化镓薄膜","authors":"M. A. Kudryashov, L. A. Mochalov, Yu. P. Kudryashova, E. A. Slapovskaya","doi":"10.1134/s0018143924700309","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Gallium selenide (GaSe) thin films on silicon(111) have been first grown by plasma-enhanced chemical vapor deposition (PECVD) using high-purity elemental gallium and selenium as the precursors. The reactive plasma components formed in the gas phase have been studied by optical emission spectroscopy. All grown films have a stoichiometry similar to that of GaSe. An increase in the plasma discharge power to 50 W and higher leads to the formation of an ε-GaSe phase, an improvement in the structural quality of the films, and an increase in the grain sizes with simultaneous grain compaction.</p>","PeriodicalId":12893,"journal":{"name":"High Energy Chemistry","volume":"41 1","pages":""},"PeriodicalIF":0.9000,"publicationDate":"2024-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Gallium Selenide Thin Films Grown on Silicon by Plasma-Enhanced Chemical Vapor Deposition\",\"authors\":\"M. A. Kudryashov, L. A. Mochalov, Yu. P. Kudryashova, E. A. Slapovskaya\",\"doi\":\"10.1134/s0018143924700309\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<h3 data-test=\\\"abstract-sub-heading\\\">Abstract</h3><p>Gallium selenide (GaSe) thin films on silicon(111) have been first grown by plasma-enhanced chemical vapor deposition (PECVD) using high-purity elemental gallium and selenium as the precursors. The reactive plasma components formed in the gas phase have been studied by optical emission spectroscopy. All grown films have a stoichiometry similar to that of GaSe. An increase in the plasma discharge power to 50 W and higher leads to the formation of an ε-GaSe phase, an improvement in the structural quality of the films, and an increase in the grain sizes with simultaneous grain compaction.</p>\",\"PeriodicalId\":12893,\"journal\":{\"name\":\"High Energy Chemistry\",\"volume\":\"41 1\",\"pages\":\"\"},\"PeriodicalIF\":0.9000,\"publicationDate\":\"2024-07-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"High Energy Chemistry\",\"FirstCategoryId\":\"92\",\"ListUrlMain\":\"https://doi.org/10.1134/s0018143924700309\",\"RegionNum\":4,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"High Energy Chemistry","FirstCategoryId":"92","ListUrlMain":"https://doi.org/10.1134/s0018143924700309","RegionNum":4,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}

引用次数: 0

摘要

摘要以高纯度元素镓和硒为前驱体，通过等离子体增强化学气相沉积（PECVD）技术首次在硅（111）上生长出了硒化镓（GaSe）薄膜。通过光学发射光谱对气相中形成的反应等离子体成分进行了研究。所有生长出来的薄膜都具有与硒化镓相似的化学计量。等离子体放电功率提高到 50 W 或更高时，会形成ε-GaSe 相，改善薄膜的结构质量，并在晶粒压实的同时增大晶粒尺寸。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Gallium Selenide Thin Films Grown on Silicon by Plasma-Enhanced Chemical Vapor Deposition

查看原文本刊更多论文

Gallium Selenide Thin Films Grown on Silicon by Plasma-Enhanced Chemical Vapor Deposition

Abstract

Gallium selenide (GaSe) thin films on silicon(111) have been first grown by plasma-enhanced chemical vapor deposition (PECVD) using high-purity elemental gallium and selenium as the precursors. The reactive plasma components formed in the gas phase have been studied by optical emission spectroscopy. All grown films have a stoichiometry similar to that of GaSe. An increase in the plasma discharge power to 50 W and higher leads to the formation of an ε-GaSe phase, an improvement in the structural quality of the films, and an increase in the grain sizes with simultaneous grain compaction.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

High Energy Chemistry 化学-物理化学

CiteScore

1.50

自引率

28.60%

发文量

审稿时长

6-12 weeks

期刊介绍： High Energy Chemistry publishes original articles, reviews, and short communications on molecular and supramolecular photochemistry, photobiology, radiation chemistry, plasma chemistry, chemistry of nanosized systems, chemistry of new atoms, processes and materials for optical information systems and other areas of high energy chemistry. It publishes theoretical and experimental studies in all areas of high energy chemistry, such as the interaction of high-energy particles with matter, the nature and reactivity of short-lived species induced by the action of particle and electromagnetic radiation or hot atoms on substances in their gaseous and condensed states, and chemical processes initiated in organic and inorganic systems by high-energy radiation.