高生长速率金属有机化学气相沉积生长的 Ga2O3 (010) 肖特基二极管

Sudipto Saha, Lingyu Meng, D. Yu, A. F. M. Anhar Uddin Bhuiyan, Hongping Zhao, U. Singisetti
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摘要

我们报告了利用三乙基镓(TEGa)和三甲基镓(TMGa)前驱体,通过金属有机化学气相沉积(MOCVD)技术在 (010) Ga2O3 基底上生长出掺杂硅的同外延β-Ga2O3 薄膜的情况。利用 TMGa 以 3 μm/h 的速度实现了令人印象深刻的 9.5 μm 厚度的外延生长,这是在电子器件制造的材料生长方面取得的重大进展。本文系统研究了在三种 MOCVD 生长薄膜上制造的肖特基势垒二极管,每种薄膜的外延层厚度、掺杂水平和生长速度都有所不同。由 2 μm 厚的 Ga2O3 外延层和 TEGa 前驱体制成的二极管显示出良好的正向电流密度、最低的比导通电阻和最低的ideality factor,证明了 TEGa 在 MOCVD 生长方面的潜力。相反,使用 TMGa 前驱体的 9.5 μm 厚 Ga2O3 层制成的二极管在最低漏电流、最高导通率和-510 V 最高反向击穿电压等方面表现出卓越的特性,而无需任何电场管理,这强调了 TMGa 适合在用于垂直功率电子器件的 Ga2O3 外延层中实现高生长率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High growth rate metal organic chemical vapor deposition grown Ga2O3 (010) Schottky diodes
We report on the growth of Si-doped homoepitaxial β-Ga2O3 thin films on (010) Ga2O3 substrates via metal-organic chemical vapor deposition (MOCVD) utilizing triethylgallium (TEGa) and trimethylgallium (TMGa) precursors. The epitaxial growth achieved an impressive 9.5 μm thickness at 3 μm/h using TMGa, a significant advance in material growth for electronic device fabrication. This paper systematically studies the Schottky barrier diodes fabricated on the three MOCVD-grown films, each exhibiting variations in the epilayer thickness, doping levels, and growth rates. The diode from the 2 μm thick Ga2O3 epilayer with TEGa precursor demonstrates promising forward current densities, the lowest specific on-resistance, and the lowest ideality factor, endorsing TEGa’s potential for MOCVD growth. Conversely, the diode from the 9.5 μm thick Ga2O3 layer with TMGa precursor exhibits excellent characteristics in terms of lowest leakage current, highest on-off ratio, and highest reverse breakdown voltage of −510 V without any electric field management, emphasizing TMGa’s suitability for achieving high growth rates in Ga2O3 epilayers for vertical power electronic devices.
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