在氩气和氮气中通过高频磁控溅射获得的磁控碳结构

A. P. Kuzmenko, A. I. Kolpakov, A. S. Sizov, V. M. Emelyanov, Y. A. Neruchev
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引用次数: 0

摘要

研究目的。通过高频磁控溅射从氩气中的碳靶材在硅基底和活性氮环境中产生碳纳米结构并对其进行表征,在镍催化剂缓冲层上获得碳纳米结构。 方法:高频磁控溅射使用 X 射线相分析、原子力显微镜和全息显微镜、拉曼散射进行研究。 研究结果拉曼散射光线 ID 1363 和 IG 1564 cm-1,以及 ωRDМ 308 和 227 cm-1 的方法证实了碳纳米管(包括单壁碳纳米管)的形成。利用原子力显微镜图像计算出了纳米薄膜的分形维度,这表明它们具有三维性质。基于磁控纳米薄膜的 X 射线相分析,确定了相干区的尺寸、纹理、微变形和平面间变形扭曲。 结论在碳磁控纳米薄膜中会出现两种变形:压缩变形(∆a < 0)和拉伸变形(∆a > 0)。碳磁控管纳米薄膜主要以单壁碳纳米管为代表,单壁碳纳米管在氩气环境中的手性为(6, 6),在镍缓冲层上的氮和氩反应混合物中的手性为(7, 7)。研究发现,在高频磁控管模式下,碳化硅在惰性环境和反应环境中都能形成。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Magnetron carbon structures obtained by high-frequency magnetron sputtering in Argon and Nitrogen
   Purpose of research. Creation and characterization of carbon nanostructures by high-frequency magnetron sputtering from a carbon target in argon on a silicon substrate and in a reactive nitrogen environment, obtained on a Ni catalyst buffer layer.   Methods. High-frequency magnetron sputtering on a silicon substrate with changes in control parameters: sputtering time power and working gas pressure Ar and N. Research was carried out using X-ray phase analysis, atomic force microscopy and holographic microscopy, Raman scattering.   Results. The formation of carbon nanotubes, including single-walled ones, was confirmed by the method of Raman scattering of light along the lines ID 1363 and IG 1564 cm-1, as well as ωRDМ 308 and 227 cm–1. Using atomic force microscopic images, the fractal dimension of the nanofilms was calculated, which indicated their 3D nature. Based on X-ray phase analysis of magnetron nanofilms, the dimensions of the coherence region, texture, microdeformations and interplanar deformation distortions were determined.   Conclusion. In carbon magnetron nanofilms, deformations of both signs occur: both compressive (∆a < 0) and tensile (∆a > 0). Carbon magnetron nanofilms are represented, among other things, by single-walled carbon nanotubes, the chirality of which in an argon environment is (6, 6), and in a reactive mixture of nitrogen and argon on a Ni buffer layer (7, 7). It was discovered that in high-frequency magnetron mode, silicon carbide is formed in both inert and reactive environments.
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