A physics based model for negative capacitance TFET considering variation in ferroelectric parameters

Here, an explicit analytical model of electrical properties like channel potential, electric field, drain current, and threshold voltage for a negative capacitance DGTFET structure is developed. The model properly calculates the channel potential profile by solving the Poisson equation using the Landau-Khalatnikov (LK) model (for incorporating the NC effect). The electric field expression is developed using a channel potential model. The drain current expression is obtained by mathematically integrating the rate of band-to-band tunneling generation over the channel thickness. The threshold voltage has been derived using a method called maximal trans-conductance. Furthermore, by varying the FE parameters like thickness (tfe), coercive field (EC), and residual polarization (PR), we improve capacitance matching and gate control of the device. All of the model results demonstrated a perfect alignment with those discovered by TCAD simulations. Designing devices and circuits for low-power applications can be more effective from these results.