用于生物传感应用的全栅极无结 FET 的温度效应评估

Q4 Engineering
Billel Smaani, Samir Labiod, M. S. Benlatreche, Boudjemaa Mehimmedetsi, Ramakant Yadav, Husien Salama
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引用次数: 0

摘要

基于全栅极无结场效应晶体管(GAA JL FET)的生物传感器因其对全栅极结构和整体传导机制的良好灵敏度,最近引起了全世界的关注。温度效应通常会影响晶体管和传感器的性能。因此,本文研究了温度对基于 3D GAA JL FET 的生物传感器的影响。本研究考虑采用介电调制(DM)方法来纳入生物分子。因此,在 77[式:见正文]K至 400[式:见正文]K的温度范围内研究了这种生物传感器的主要特性。模拟结果表明,随着温度的升高,通态电流降低,但失态电流增加。关态电流随温度的变化高于导通电流的变化。此外,这种生物传感器似乎具有更精细的阈值电压。此外,获得的结果表明,当温度从 200[式:见正文]K到 400[式:见正文]K时,电流灵敏度会增加,而当温度值较低时,如 100[式:见正文]K和 77[式:见正文]K,电流灵敏度会降低。此外,基于 GAA JL FET 的生物传感器在高温下检测中性生物分子时更为可靠。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Temperature Effect Assessment on the Gate-All-Around Junctionless FET for Bio-Sensing Applications
The gate-all-around junctionless field-effect transistor (GAA JL FET)-based biosensor has recently attracted worldwide attention due to its good sensitivity to gate-all-around architecture and overall conduction mechanism. The effect of temperature usually affects the performance of transistors and sensors. Therefore, the impact of temperature on the 3D GAA JL FET-based biosensor has been investigated in this work. The dielectric modulation (DM) approach has been considered for including biomolecules. Consequently, the main proprieties of this biosensor have been investigated by ranging the temperature from 77[Formula: see text]K to 400[Formula: see text]K. The simulated results showed that the on-state current lowers as the temperature rises, but the off-state current increases. The off-current variation concerning the temperature is higher than the on-current change. Also, this type of biosensor appears to have a finer threshold voltage. Furthermore, the obtained results reveal that the current sensitivity is increased when ranging from temperature from 200[Formula: see text]K to 400[Formula: see text]K, and deteriorates for lower temperature values, like 100[Formula: see text]K and 77[Formula: see text]K. In addition, the GAA JL FET-based biosensor is more reliable for the detection of neutral biomolecules at high temperatures.
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来源期刊
International Journal of High Speed Electronics and Systems
International Journal of High Speed Electronics and Systems Engineering-Electrical and Electronic Engineering
CiteScore
0.60
自引率
0.00%
发文量
22
期刊介绍: Launched in 1990, the International Journal of High Speed Electronics and Systems (IJHSES) has served graduate students and those in R&D, managerial and marketing positions by giving state-of-the-art data, and the latest research trends. Its main charter is to promote engineering education by advancing interdisciplinary science between electronics and systems and to explore high speed technology in photonics and electronics. IJHSES, a quarterly journal, continues to feature a broad coverage of topics relating to high speed or high performance devices, circuits and systems.
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