Temperature Effect Assessment on the Gate-All-Around Junctionless FET for Bio-Sensing Applications

The gate-all-around junctionless field-effect transistor (GAA JL FET)-based biosensor has recently attracted worldwide attention due to its good sensitivity to gate-all-around architecture and overall conduction mechanism. The effect of temperature usually affects the performance of transistors and sensors. Therefore, the impact of temperature on the 3D GAA JL FET-based biosensor has been investigated in this work. The dielectric modulation (DM) approach has been considered for including biomolecules. Consequently, the main proprieties of this biosensor have been investigated by ranging the temperature from 77[Formula: see text]K to 400[Formula: see text]K. The simulated results showed that the on-state current lowers as the temperature rises, but the off-state current increases. The off-current variation concerning the temperature is higher than the on-current change. Also, this type of biosensor appears to have a finer threshold voltage. Furthermore, the obtained results reveal that the current sensitivity is increased when ranging from temperature from 200[Formula: see text]K to 400[Formula: see text]K, and deteriorates for lower temperature values, like 100[Formula: see text]K and 77[Formula: see text]K. In addition, the GAA JL FET-based biosensor is more reliable for the detection of neutral biomolecules at high temperatures.