在 NO 或 POCl3 中退火的 4H-SiC(0001)/SiO2 界面栅极氧化物上的固定电荷和捕获电子对自由电子迁移率的影响

Applied Physics Express Pub Date : 2024-07-16 DOI:10.35848/1882-0786/ad63ef

Koji Ito, Hajime Tanaka, M. Horita, J. Suda, Tsunenobu Kimoto

{"title":"在 NO 或 POCl3 中退火的 4H-SiC(0001)/SiO2 界面栅极氧化物上的固定电荷和捕获电子对自由电子迁移率的影响","authors":"Koji Ito, Hajime Tanaka, M. Horita, J. Suda, Tsunenobu Kimoto","doi":"10.35848/1882-0786/ad63ef","DOIUrl":null,"url":null,"abstract":"\n Free electron mobility (µ\n free) in 4H-SiC(0001) metal-oxide-semiconductor field-effect transistors (MOSFETs) with gate oxides annealed in NO or POCl3 was calculated in a wide range of effective normal field (E\n eff) from 0.02 to 2 MV cm−1, taking account of scattering by fixed charges and trapped electrons. The present calculation indicates that the Hall mobility in the high-E\n eff region experimentally obtained for NO-annealed MOSFETs (14 cm2 V−1 s−1 at 1.1 MV cm−1) is much lower than that for POCl3-annealed MOSFETs (41 cm2 V−1 s−1) due to severe Coulomb scattering by electrons trapped at a very high density of interface states.","PeriodicalId":503885,"journal":{"name":"Applied Physics Express","volume":"67 13","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Influence of fixed charges and trapped electrons on free electron mobility at 4H-SiC(0001)/SiO2 interfaces with gate oxides annealed in NO or POCl3\",\"authors\":\"Koji Ito, Hajime Tanaka, M. Horita, J. Suda, Tsunenobu Kimoto\",\"doi\":\"10.35848/1882-0786/ad63ef\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n Free electron mobility (µ\\n free) in 4H-SiC(0001) metal-oxide-semiconductor field-effect transistors (MOSFETs) with gate oxides annealed in NO or POCl3 was calculated in a wide range of effective normal field (E\\n eff) from 0.02 to 2 MV cm−1, taking account of scattering by fixed charges and trapped electrons. The present calculation indicates that the Hall mobility in the high-E\\n eff region experimentally obtained for NO-annealed MOSFETs (14 cm2 V−1 s−1 at 1.1 MV cm−1) is much lower than that for POCl3-annealed MOSFETs (41 cm2 V−1 s−1) due to severe Coulomb scattering by electrons trapped at a very high density of interface states.\",\"PeriodicalId\":503885,\"journal\":{\"name\":\"Applied Physics Express\",\"volume\":\"67 13\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-07-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Physics Express\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.35848/1882-0786/ad63ef\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Express","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.35848/1882-0786/ad63ef","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

考虑到固定电荷和捕获电子的散射，在 0.02 至 2 MV cm-1 的宽有效法向场 (E eff) 范围内计算了栅极氧化物在 NO 或 POCl3 中退火的 4H-SiC(0001) 金属氧化物半导体场效应晶体管 (MOSFET) 中的自由电子迁移率 (µ free)。本计算表明，在高 E eff 区域，NO 退火 MOSFET 实验获得的霍尔迁移率（1.1 MV cm-1 时为 14 cm2 V-1 s-1）远低于 POCl3 退火 MOSFET 的霍尔迁移率（41 cm2 V-1 s-1），这是由于被困在极高密度界面态的电子产生了严重的库仑散射。

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Influence of fixed charges and trapped electrons on free electron mobility at 4H-SiC(0001)/SiO2 interfaces with gate oxides annealed in NO or POCl3

Free electron mobility (µ free) in 4H-SiC(0001) metal-oxide-semiconductor field-effect transistors (MOSFETs) with gate oxides annealed in NO or POCl3 was calculated in a wide range of effective normal field (E eff) from 0.02 to 2 MV cm−1, taking account of scattering by fixed charges and trapped electrons. The present calculation indicates that the Hall mobility in the high-E eff region experimentally obtained for NO-annealed MOSFETs (14 cm2 V−1 s−1 at 1.1 MV cm−1) is much lower than that for POCl3-annealed MOSFETs (41 cm2 V−1 s−1) due to severe Coulomb scattering by electrons trapped at a very high density of interface states.

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Applied Physics Express

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